AO6价格

参考价格:¥0.6500

型号:AO6376 品牌:AOS 备注:这里有AO6多少钱,2024年最近7天走势,今日出价,今日竞价,AO6批发/采购报价,AO6行情走势销售排行榜,AO6报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel Enhancement Mode Field Effect Transistor

[SHENZHENFREESCALE] GeneralDescription TheAO6400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=30V

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

30V N-Channel MOSFET

GeneralDescription TheAO6400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ProductSummary VDS30V ID(at

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

FEATURES ●LowOn-Resistance

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6401isPb-free(meetsROHS&Sony259spec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6401AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AO6401AisPb-free(meetsROHS&Sony259specifications). F

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

30V P-Channel MOSFET

ProductSummary VDS(V)=-30V ID=-5A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6401isPb-free(meetsROHS&Sony259spec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

30V N-Channel MOSFET

30VN-ChannelMOSFET GeneralDescription TheAO6402usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdevicemaybeusedasaloadswitchorinPWMapplications. ProductSummary VDS30V ID(atVGS=

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6402A/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontothesource,whichmaybeusedtobypassthes

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=7.5A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

30V N-Channel MOSFET

Features VDS(V)=30V ID=7.5A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=7.5A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

30V N-Channel MOSFET

30VN-ChannelMOSFET GeneralDescription TheAO6402usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdevicemaybeusedasaloadswitchorinPWMapplications. ProductSummary VDS30V ID(atVGS=

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.Itmaybeusedincommon-drainconfigurationtoformabidirectionalblockingswitch.AO6403isPb

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-6A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-6A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.Itmaybeusedincommon-drainconfigurationtoformabidirectionalblockingswitch.AO6403isPb

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6404usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8Vwhileretaininga12VVGS(MAX)rating.ItisESDprotected.StandardProductAO6404isPb-free(meetsROHS&Sony259specifications).A

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=8.6A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=8.6A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6404usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8Vwhileretaininga12VVGS(MAX)rating.ItisESDprotected.StandardProductAO6404isPb-free(meetsROHS&Sony259specifications).A

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel MOSFET

■Features ●VDS(V)=-30V ●ID=-5A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6405usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6405isPb-free(meetsROHS&Sony259specifications).AO6405LisaGreenProductorde

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

[Alpha&OmegaSemiconductor,Ltd.] GeneralDescription TheAO6407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.Itoffersoperationoverawidegatedriverangefrom1.8Vto12V.ItisESDprotected.Thisdeviceissuitableforuseasaloadswitch.StandardproductAO6408isPb-free(meetsROHS

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=8.8A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=8.8A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.Itoffersoperationoverawidegatedriverangefrom1.8Vto12V.ItisESDprotected.Thisdeviceissuitableforuseasaloadswitch.StandardproductAO6408isPb-free(meetsROHS

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.Itoffersoperationoverawidegatedriverangefrom2.5Vto12V.Thisdeviceissuitableforuseasaloadswitch.StandardproductAO6414isPb-free(meetsROHS&Sony259speci

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.Itoffersoperationoverawidegatedriverangefrom2.5Vto12V.Thisdeviceissuitableforuseasaloadswitch.StandardproductAO6414isPb-free(meetsROHS&Sony259speci

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6415usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO6415isPb-free(meetsROH

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-3.3A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-3.3A(VGS=-10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6415usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO6415isPb-free(meetsROH

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6419usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6419isPb-free(meetsROHS&Sony259specifications).AO6419LisaGreenProductorde

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6419usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO6419isPb-free(meetsROHS&Sony259specifications).AO6419LisaGreenProductorde

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6420usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ProductSummary VDS(V)=60V ID=4.2A(VGS=10V) RDS(ON)

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=4.2A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=4.2A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6422/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.Thisdeviceissuitableforgeneralpurposeapplication. AO6422andAO6422Lareelectricallyidentical. -RoHSCompliant -AO6422LisHa

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=5A(VGS=4.5V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel MOSFET

■Features ●VDS(V)=20V ●ID=5A(VGS=4.5V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6422/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.Thisdeviceissuitableforgeneralpurposeapplication. AO6422andAO6422Lareelectricallyidentical. -RoHSCompliant -AO6422LisHa

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

N- and P-Channel V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Complementary Trench MOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N P Channel MOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

UMWUMW Rightway Semiconductor Co., Ltd.

友台友台半导体

UMW

Complementary Trench MOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6602usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6602isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

Complementary Trench MOSFET

■Features N-Channel ●VDS(V)=30V ●ID=3.5A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

Complementary Trench MOSFET

■Features N-Channel ●VDS(V)=30V ●ID=3.5A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO6602usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6602isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO6产品属性

  • 类型

    描述

  • 型号

    AO6

  • 功能描述

    MOSFET N-CH 30V 6.9A 6-TSOP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2024-6-10 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
2020+
SOT23-6
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ALPHA
18+
SOT-163
9860
全新原装现货/假一罚百!
AOS(万代)/UMW(友台)
24+
SOT-23-6
5000
诚信服务,绝对原装原盘。
AOS/万代
21+
66000
只做原装,假一罚十
AOS/万代
24+
SOT23-6
155458
明嘉莱只做原装正品现货
AOS
23+
SOT23-6
44316
正规渠道,免费送样。支持账期,BOM一站式配齐
AOS/万代
2024+原装现货
SOT23-6
8950
BOM配单专家,发货快,价格低
AO/ALPHA&OMEGA
2008++
SOT-163SOT-23-6
8740
新进库存/原装
AOS/万代
TSOP6
7906200
AOS
19+
SOP-6
63276
原厂代理渠道,每一颗芯片都可追溯原厂;

AO6芯片相关品牌

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  • Maxim
  • NELLSEMI
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  • SOCAY
  • TEMEX
  • TURCK
  • ZETTLER

AO6数据表相关新闻