Complementary Enhancement Mode Field Effect Transistor

General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6

Complementary Trench MOSFET

■ Features N-Channel ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

30V Complementary MOSFET

文件：327.64 Kbytes Page：9 Pages

MOSFET

P-channel and N-channel Complementary MOSFETS

互补型功率MOSFETs

Complementary Trench MOSFET

■ Features N-Channel ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6

30V Complementary MOSFET

文件：327.64 Kbytes Page：9 Pages

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

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N-Channel Super Trench Power MOSFET

文件：874.32 Kbytes Page：6 Pages

N-Channel Super Trench Power MOSFET

文件：874.32 Kbytes Page：6 Pages

1550 MHz to 2150 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

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