N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO6404 is Pb-free (meets ROHS & Sony 259 specifications). A

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 8.6 A (VGS = 10V) ● RDS(ON)

低压MOSFET (12V - 30V)

20V N-Channel MOSFET

20V N-Channel MOSFET

文件：219.28 Kbytes Page：4 Pages

N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 8.6 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO6404 is Pb-free (meets ROHS & Sony 259 specifications). A

20V N-Channel MOSFET

文件：219.28 Kbytes Page：4 Pages

High speed and High performance 4-Bit Microcontroller

GENERAL DESCRIPTION The MSM6404A microcontroller is a low-power device implemented in complementary metal oxide semiconductor technology. The MSM6404A is optimized for high-speed processing and complicated-control applications. The MSM6404VS is a CMOS 4-bit microcontroller that employs an ex

Silicon Unilateral Switch (SUS)

Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02/°C temperature coefficient. A gate lead is provided to elim

RF POWER TRANSISTOR NPN SILICON

文件：276.93 Kbytes Page：10 Pages

5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages

5 V mixer/oscillator-PLL synthesizers for hyperband tuners

文件：221.55 Kbytes Page：32 Pages