丝印代码：42**；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6402A/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the s

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

丝印代码：42KL；30V N-Channel MOSFET

Features VDS (V) = 30V ID = 7.5A (VGS = 10V) RDS(ON)

丝印代码：42KLU50；30V N-Channel MOSFET

General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass th

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

30V N MOSFET

丝印代码：42**；30V N-Channel MOSFET

文件：224.21 Kbytes Page：5 Pages

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.5 A (VGS = 10V) ● RDS(ON)

N-Channel 30V (D-S) MOSFET

30V N-Channel MOSFET

文件：224.21 Kbytes Page：5 Pages

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transisotr The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design,

Programmable Unijunction Transistor (PUT)

Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (P

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER?

文件：222.03 Kbytes Page：7 Pages