位置：首页 > IC中文资料第18页 > AO6601
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AO6601 | Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6 | AOSMD 万国半导体 |   | |
AO6601 | N- and P-Channel V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | |
AO6601 | N P Channel MOSFET Features N-Ch: * VDS (V)=30V * ID= 3.4A (VGS=10V) * RDS(ON) 60m (VGS = 10V) * RDS(ON) 70m (VGS = 4.5V) * RDS(ON) 90m (VGS = 2.5V) P-Ch: * VDS (V)=-30V * ID=-2.3A (VGS=-10V) * RDS(ON) 115m (VGS = -10V) * RDS(ON) 150m (VGS = -4.5V) * RDS(ON) 200m (VGS = -2.5V) | UMW 友台半导体 | | |
AO6601 | N P Channel MOSFET General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Features N-Ch: VDS (V)=30V RDS(ON) | EVVOSEMI 翊欧 | | |
AO6601 | Complementary Trench MOSFET ■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
AO6601 | MOSFET | ETC 知名厂家 | ETC | |
AO6601 | 互补型功率MOSFETs | AOS 美国万代 | | |
AO6601 | 30V Complementary MOSFET 文件：482.71 Kbytes Page：9 Pages | AOSMD 万国半导体 | | |
Complementary Trench MOSFET ■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6 | AOSMD 万国半导体 | | ||
30V Complementary MOSFET 文件：482.71 Kbytes Page：9 Pages | AOSMD 万国半导体 | | ||
Comfort Probe with Removable 4mm Banana Plug Adapter 文件：205.28 Kbytes Page：2 Pages | POMONA Pomona Electronics | | ||
750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO 文件：640.11 Kbytes Page：24 Pages | AD 亚德诺 | | ||
1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO 文件：834.01 Kbytes Page：32 Pages | AD 亚德诺 | | ||
750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO 文件：640.11 Kbytes Page：24 Pages | AD 亚德诺 | | ||
Low Noise JFET Amplifiers 文件：654.75 Kbytes Page：4 Pages | Fairchild 仙童半导体 | |
AO6601产品属性
- 类型
描述
- 型号
AO6601
- 功能描述
MOSFET N/P-CH COMPL 30V 6-TSOP
- RoHS
是
- 类别
分离式半导体产品 >> FET - 阵列
- 系列
-
- 产品目录绘图
8-SOIC Mosfet Package
- 标准包装
1
- 系列
- FET
- 型
2 个 N 沟道（双） FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
60V 电流 - 连续漏极(Id) @ 25°
- C
3A 开态Rds（最大）@ Id, Vgs @ 25°
- C
75 毫欧 @ 4.6A，10V Id 时的
- Vgs(th)（最大）
3V @ 250µA 闸电荷(Qg) @
- Vgs
20nC @ 10V 输入电容(Ciss) @
- Vds
- 功率 -
- 最大
1.4W
- 安装类型
表面贴装
- 封装/外壳
PowerPAK? SO-8
- 供应商设备封装
PowerPAK? SO-8
- 包装
Digi-Reel®
- 产品目录页面
1664(CN2011-ZH PDF)
- 其它名称
SI7948DP-T1-GE3DKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
24+ |
TSOP |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ALPHA |
2016+ |
SOT23-6 |
2654 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
AO |
24+ |
SOT163 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ALPHA |
25+ |
SOT23-6 |
32152 |
ALPHA全新特价AO6601即刻询购立享优惠#长期有货 |
|||
AOS |
2430+ |
TSOP6 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS(万代) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
AOS/万代 |
25+ |
TSOP-6 |
15000 |
全新原装现货,价格优势 |
|||
AOS |
2015+ |
SOP |
19889 |
一级代理原装现货,特价热卖! |
|||
AOS/万代 |
21+ |
TSOP-6 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
21+ |
TSOP6 |
10000 |
只做原装,质量保证 |
AO6601芯片相关品牌
AO6601规格书下载地址
AO6601参数引脚图相关
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DdatasheetPDF页码索引
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