位置：首页 > IC中文资料第18页 > AO6601
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AO6601 | Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6 | AOSMD 万国半导体 |   | |
AO6601 | N- and P-Channel V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | |
AO6601 | 丝印代码：F14L；N P Channel MOSFET Features N-Ch: * VDS (V)=30V * ID= 3.4A (VGS=10V) * RDS(ON) 60m (VGS = 10V) * RDS(ON) 70m (VGS = 4.5V) * RDS(ON) 90m (VGS = 2.5V) P-Ch: * VDS (V)=-30V * ID=-2.3A (VGS=-10V) * RDS(ON) 115m (VGS = -10V) * RDS(ON) 150m (VGS = -4.5V) * RDS(ON) 200m (VGS = -2.5V) | UMW 友台半导体 | | |
AO6601 | 丝印代码：F14LU；N P Channel MOSFET General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Features N-Ch: VDS (V)=30V RDS(ON) | EVVOSEMI 翊欧 | | |
AO6601 | Complementary Trench MOSFET ■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
AO6601 | 互补型功率MOSFETs 30V Complementary MOSFET | AOS 美国万代 | | |
AO6601 | MOSFET | MTW | | |
AO6601 | 30V Complementary MOSFET 文件：482.71 Kbytes Page：9 Pages | AOSMD 万国半导体 | | |
Complementary Trench MOSFET ■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6 | AOSMD 万国半导体 | | ||
30V Complementary MOSFET 文件：482.71 Kbytes Page：9 Pages | AOSMD 万国半导体 | | ||
Amplifier Transistors Amplifier Transistors Voltage and current are negative for PNP transistors | MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors 文件：79.14 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Amplifier Transistors 文件：79.14 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Amplifier Transistors 文件：79.14 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Amplifier Transistors 文件：79.14 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
AO6601产品属性
- 类型
描述
- 型号
AO6601
- 功能描述
MOSFET N/P-CH COMPL 30V 6-TSOP
- RoHS
是
- 类别
分离式半导体产品 >> FET - 阵列
- 系列
-
- 产品目录绘图
8-SOIC Mosfet Package
- 标准包装
1
- 系列
- FET
- 型
2 个 N 沟道（双） FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
60V 电流 - 连续漏极(Id) @ 25°
- C
3A 开态Rds（最大）@ Id, Vgs @ 25°
- C
75 毫欧 @ 4.6A，10V Id 时的
- Vgs(th)（最大）
3V @ 250µA 闸电荷(Qg) @
- Vgs
20nC @ 10V 输入电容(Ciss) @
- Vds
- 功率 -
- 最大
1.4W
- 安装类型
表面贴装
- 封装/外壳
PowerPAK? SO-8
- 供应商设备封装
PowerPAK? SO-8
- 包装
Digi-Reel®
- 产品目录页面
1664(CN2011-ZH PDF)
- 其它名称
SI7948DP-T1-GE3DKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
TSOP-6/SOT23-6 |
888000 |
AOS代理商 优势现货美国万代全系列MOS管 |
|||
AOS/万代 |
20+ |
TSOP-6 |
120000 |
原装正品 可含税交易 |
|||
AOS |
19+ |
SOT23-6 |
8500 |
||||
AOS |
16/17+ |
TSSOP-6 |
7709 |
AOS现货库存长期供应 |
|||
AOS |
24+ |
TSOP |
26316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
AOS |
24+ |
TSOP-6 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
AOS/万代 |
2021+ |
TSOP-6 |
9000 |
原装现货,随时欢迎询价 |
|||
AOS |
23+ |
TSOP-6 |
210000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS |
25+ |
TSOP |
15000 |
只做原装 有挂有货 假一赔十 |
|||
ALPHA |
25+ |
SOT23-6 |
32152 |
ALPHA全新特价AO6601即刻询购立享优惠#长期有货 |
AO6601规格书下载地址
AO6601参数引脚图相关
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- AO6422_12
- AO6422
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- AO6419
- AO6415L
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- AO6415
- AO6414L
- AO6414
- AO6411
- AO6409L
- AO6409AL
- AO6409A
- AO6409
- AO6408L
- AO6408
- AO6407
- AO6405L
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