型号 功能描述 生产厂家 企业 LOGO 操作
AO6601

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

AOSMD

万国半导体

AO6601

Complementary Trench MOSFET

■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO6601

N- and P-Channel V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

AO6601

N P Channel MOSFET

Features N-Ch: * VDS (V)=30V * ID= 3.4A (VGS=10V) * RDS(ON) 60m (VGS = 10V) * RDS(ON) 70m (VGS = 4.5V) * RDS(ON) 90m (VGS = 2.5V) P-Ch: * VDS (V)=-30V * ID=-2.3A (VGS=-10V) * RDS(ON) 115m (VGS = -10V) * RDS(ON) 150m (VGS = -4.5V) * RDS(ON) 200m (VGS = -2.5V)

UMW

友台半导体

AO6601

N P Channel MOSFET

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Features N-Ch: VDS (V)=30V RDS(ON)

EVVOSEMI

翊欧

AO6601

MOSFET

ETC

知名厂家

AO6601

互补型功率MOSFETs

AOS

美国万代

AO6601

30V Complementary MOSFET

文件:482.71 Kbytes Page:9 Pages

AOSMD

万国半导体

Complementary Trench MOSFET

■ Features N-Channel : ● VDS (V) = 30V ● ID = 3.4 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6

AOSMD

万国半导体

30V Complementary MOSFET

文件:482.71 Kbytes Page:9 Pages

AOSMD

万国半导体

Comfort Probe with Removable 4mm Banana Plug Adapter

文件:205.28 Kbytes Page:2 Pages

POMONA

Pomona Electronics

750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件:640.11 Kbytes Page:24 Pages

AD

亚德诺

1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件:834.01 Kbytes Page:32 Pages

AD

亚德诺

750 MHz to 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件:640.11 Kbytes Page:24 Pages

AD

亚德诺

Low Noise JFET Amplifiers

文件:654.75 Kbytes Page:4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AO6601产品属性

  • 类型

    描述

  • 型号

    AO6601

  • 功能描述

    MOSFET N/P-CH COMPL 30V 6-TSOP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-9-21 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
24+
TSOP
22048
原厂可订货,技术支持,直接渠道。可签保供合同
ALPHA
2016+
SOT23-6
2654
只做原装,假一罚十,公司可开17%增值税发票!
AO
24+
SOT163
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
AOS(万代)/UMW(友台)
24+
SOT-23-6
5000
诚信服务,绝对原装原盘。
AOS/万代
24+
TSOP-6
498694
免费送样原盒原包现货一手渠道联系
AOS/万代
24+
TSOP-6
6000
只做原厂渠道 可追溯货源
AO/ALPHA&OMEGA
24+
SOT-23
9200
新进库存/原装
AOS
24+
TSOP-6
9800
一级代理/全新原装现货/长期供应!
AOS
24+
TSOP
15000
只做原装 有挂有货 假一赔十
AOS
19+
SOT23-6
8500

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