P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). F

丝印代码：41BL；30V P-Channel MOSFET

Product Summary VDS (V) = -30V ID = -5A (VGS = 10V) RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

P沟道MOSFET (8V - 60V)

30V P-Channel MOSFET

30V P-Channel MOSFET

文件：242.83 Kbytes Page：5 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-5 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

文件：242.83 Kbytes Page：5 Pages

包装：管件 描述：MOSFET P-CH 30V 6TSOP 分立半导体产品 晶体管 - FET，MOSFET - 单个

RF LINEAR POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. • S

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

RS232C LINE DRIVER/RECEIVER

文件：223.45 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER

文件：223.45 Kbytes Page：7 Pages

RS232C LINE DRIVER/RECEIVER

文件：223.45 Kbytes Page：7 Pages