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2SK357价格

参考价格：￥0.5200

型号：2SK3576 品牌：NEC 备注：这里有2SK357多少钱，2025年最近7天走势，今日出价，今日竞价，2SK357批发/采购报价，2SK357行情走势销售排行榜，2SK357报价。

型号	功能描述	生产厂家企业	LOGO
2SK357	HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 文件：352.86 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SK357	Fast Switching Speed 文件：66.15 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK357	HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS	TOSHIBA 东芝	TOSHIBA
2SK3570	SWITCHING N-CHANNEL POWER MOSFET The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.	NEC 瑞萨	NEC
2SK3570	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3570-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3570-S	SWITCHING N-CHANNEL POWER MOSFET The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.	NEC 瑞萨	NEC
2SK3570-Z	SWITCHING N-CHANNEL POWER MOSFET The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.	NEC 瑞萨	NEC
2SK3570-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3570-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3570-ZK	SWITCHING N-CHANNEL POWER MOSFET The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.	NEC 瑞萨	NEC
2SK3571	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance	NEC 瑞萨	NEC
2SK3571	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3571	MOS Field Effect Transistor Features ● 4.5V drive available. ● Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) ● Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) ● Built-in gate protection diode ● Surface mount device available	KEXIN 科信电子	KEXIN
2SK3571-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3571-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance	NEC 瑞萨	NEC
2SK3571-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance	NEC 瑞萨	NEC
2SK3571-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3571-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d	RENESAS 瑞萨	RENESAS
2SK3571-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available. • Low on-state resistance	NEC 瑞萨	NEC
2SK3572	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3572	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3572-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3572-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3572-S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3572-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3572-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3572-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3572-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3572-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3572-ZK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3573	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3573	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3573	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3573	MOS Field Effect Transistor Features ● 4.5V drive available. ● Low on-state resistance, RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42A) ● Low gate charge QG = 68nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A) ● Built-in gate protection diode ● Surface mount device available	KEXIN 科信电子	KEXIN
2SK3573-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3573-S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3573-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3573-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3573-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3573-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3573-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V	RENESAS 瑞萨	RENESAS
2SK3573-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state	NEC 瑞萨	NEC
2SK3573-ZK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3574	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3574	MOS Field Effect Transistor Features • 4.5V drive available. • Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS = 10 V, ID = 24A) • Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) • Built-in gate protection diode • Surface mount device available	KEXIN 科信电子	KEXIN
2SK3574	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r	NEC 瑞萨	NEC
2SK3574	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V	RENESAS 瑞萨	RENESAS
2SK3574-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V	RENESAS 瑞萨	RENESAS
2SK3574-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r	NEC 瑞萨	NEC
2SK3574-S	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3574-Z	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3574-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r	NEC 瑞萨	NEC
2SK3574-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V	RENESAS 瑞萨	RENESAS
2SK3574-ZK	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V	RENESAS 瑞萨	RENESAS
2SK3574-ZK	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r	NEC 瑞萨	NEC
2SK3574-ZK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3575	MOS Field Effect Transistor Features ● 4.5V drive available. ● Low on-state resistance, RDS(on)1 = 4.5mΩ MAX. (VGS = 10 V, ID = 42A) ● Low gate charge QG = 70nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A) ● Built-in gate protection diode ● Surface mount device available	KEXIN 科信电子	KEXIN
2SK3575	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3575 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state resistance	NEC 瑞萨	NEC
2SK3575	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3575 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V	RENESAS 瑞萨	RENESAS

2SK357产品属性

类型
描述
型号
2SK357
制造商
NEC Electronics Corporation

2SK357供应商更多...

更新时间：2025-12-25 11:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	2SK3573	NEC	25+	TO-220	45000	NEC全新现货2SK3573即刻询购立享优惠#长期有排单订	询价
贸泽芯城（深圳）电子科技有限公司	2SK3570	NEC	23+	TO263	34830	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市坤融电子科技有限公司	2SK3577-T1B-AT	RENESAS/瑞萨	2025+	SC-59	5000	原装进口价格优请找坤融电子!	询价
艾睿（深圳）半导体有限公司	2SK357	NEC	2447	TO-220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	2SK357	TOSHIBA/东芝	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	2SK357	NEC	24+	TO-220	550		询价
深圳市诺美思科技有限公司	2SK357	TOSHIBA		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市拓亿芯电子有限公司	2SK3570(1)-ZK-E1/JM	NEC	25+	TO-263	30000	代理全新原装现货,价格优势	询价
深圳市科芯源微电子有限公司	2SK3577-T1B-AT	RENESAS/瑞萨	23+	SC-59	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市明嘉莱科技有限公司	2SK3570	NEC	25+	TO-263	860000	明嘉莱只做原装正品现货	询价

2SK357芯片相关品牌

2SK357规格书下载地址

2SK357参数引脚图相关

2SK357数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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