SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3573 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A)

• Low gate charge

QG = 68 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A)

• Surface mount device available