| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3574 | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r | NEC 瑞萨 |   | |
2SK3574 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V | RENESAS 瑞萨 | | |
2SK3574 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
2SK3574 | MOS Field Effect Transistor Features • 4.5V drive available. • Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS = 10 V, ID = 24A) • Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) • Built-in gate protection diode • Surface mount device available | KEXIN 科信电子 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5V drive available • Low on-state r | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-220SMD |
28722 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
24+ |
NA/ |
3320 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
25+ |
VQFN-24 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS/瑞萨 |
2450+ |
TO-220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
|||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
24+ |
TO-220AB |
8866 |
||||
RENESAS/瑞萨 |
24+ |
TO-220 |
28347 |
只做全新原装进口现货 |
2SK3574芯片相关品牌
2SK3574规格书下载地址
2SK3574参数引脚图相关
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- 2SK3575-S
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- 2SK3572
- 2SK3571-ZK
- 2SK3571-Z
- 2SK3571-S
- 2SK3571
- 2SK3570-ZK
- 2SK3570-Z
- 2SK3570-S
- 2SK3570
- 2SK357
- 2SK3569_10
- 2SK3569_06
- 2SK3569
- 2SK3568
- 2SK3567
- 2SK3566
- 2SK3565
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- 2SK3563
- 2SK3562
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- 2SK3547
2SK3574数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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