SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3571 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

FEATURES

•4.5V drive available.

•Low on-state resistance,

RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)

•Low gate charge

QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)

•Built-in gate protection diode

•Surface mount device available