SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3575 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

•4.5V drive available

•Low on-state resistance

RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

•Low gate charge

QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A)

•Avalanche capability ratings

•Surface mount device available