DESCRIPTION

The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)

• Low gate charge

QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)

• Built-in gate protection diode

• Surface mount device available