MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.

MOS Field Effect Transistors

Features ● Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) ● Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) ● Built-in gate protection diode

Pch Single Power Mosfet -60V -65A 20Mohm Mp-25/To-220Ab

The 2SJ605 is a Pch Single Power Mosfet -60V -65A 20Mohm Mp-25/To-220Ab. • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)\n• Low input capacitance Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語;

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.

Pch Single Power Mosfet -60V -65A 20Mohm Mp-25Z/To-220Smd

The 2SJ605-Z is a Pch Single Power Mosfet -60V -65A 20Mohm Mp-25Z/To-220Smd. • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)\n• Low input capacitance Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語;

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci

MOS FIELD EFFECT TRANSISTOR

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Power MOSFETs