位置：首页 > IC中文资料第6824页 > 2SJ605
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ605 | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 |   | |
2SJ605 | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | |
2SJ605 | MOS Field Effect Transistors Features ● Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) ● Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) ● Built-in gate protection diode | KEXIN 科信电子 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON) | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：220 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ605产品属性
- 类型
描述
- 型号
2SJ605
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
MOS Field Effect Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-220AB |
20000 |
||||
NEC |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
2011+ |
TO-220 |
3685 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
06+ |
TO-220 |
20 |
只做原装正品 |
|||
RENESAS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
TO-220 |
35890 |
||||
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
NEC |
2024 |
TO-263 |
503136 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
2SJ605芯片相关品牌
2SJ605规格书下载地址
2SJ605参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SJ632
- 2SJ630
- 2SJ629
- 2SJ628
- 2SJ626
- 2SJ625
- 2SJ624
- 2SJ621
- 2SJ620
- 2SJ619
- 2SJ618
- 2SJ616
- 2SJ615
- 2SJ613
- 2SJ612
- 2SJ610
- 2SJ609
- 2SJ608
- 2SJ607-ZJ-E1
- 2SJ607-ZJ
- 2SJ607-Z-AZ
- 2SJ607-Z
- 2SJ607-S
- 2SJ607-AZ
- 2SJ607
- 2SJ606-ZJ
- 2SJ606-Z(AZ)
- 2SJ606-Z
- 2SJ606-S
- 2SJ606-AZ
- 2SJ606
- 2SJ605-ZJ-E1-AZ
- 2SJ605-ZJ
- 2SJ605-Z-AZ
- 2SJ605-Z
- 2SJ605-S
- 2SJ605-AZ
- 2SJ604-ZJ-E1-AZ
- 2SJ604-ZJ
- 2SJ604-Z-AZ
- 2SJ604-Z
- 2SJ604-S
- 2SJ604-AZ
- 2SJ604.
- 2SJ604
- 2SJ603-ZJ
- 2SJ603-Z
- 2SJ603-S
- 2SJ603
- 2SJ602-ZJ
- 2SJ602-Z
- 2SJ602-S
- 2SJ602-AZ
- 2SJ602
- 2SJ601-Z-E2
- 2SJ601-Z-E1-AZ
- 2SJ601-Z-E1
- 2SJ601-Z-AZ
- 2SJ601
- 2SJ600
- 2SJ599
- 2SJ598
- 2SJ597
- 2SJ596
- 2SJ595
- 2SJ594
- 2SJ591
- 2SJ590
- 2SJ589
- 2SJ588
- 2SJ587
- 2SJ586
- 2SJ583
- 2SJ580
2SJ605数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
