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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ605-Z | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 |   | |
2SJ605-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS Field Effect Transistors Features ● Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) ● Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) ● Built-in gate protection diode | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON) | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | |
2SJ605-Z产品属性
- 类型
描述
- 型号
2SJ605-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
26050 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
13+ |
TO-263 |
548 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
13+P |
TO-263 |
548 |
深圳原装进口无铅现货 |
|||
NEC |
2024 |
TO-263 |
503136 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
RENESAS |
25+23+ |
TO-263 |
26889 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
548 |
只做原厂渠道 可追溯货源 |
|||
NEC |
24+ |
TO-263 |
8866 |
||||
NEC |
23+ |
SOT263 |
7000 |
||||
RENESAS |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
|||
NEC |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
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2SJ605-Z规格书下载地址
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2019-10-30
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