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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ605-Z | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 |   | |
2SJ605-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | |
2SJ605-Z | Pch Single Power Mosfet -60V -65A 20Mohm Mp-25Z/To-220Smd | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS Field Effect Transistors Features ● Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) ● Low input capacitance Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A) ● Built-in gate protection diode | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON) | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ci | NEC 瑞萨 | |
2SJ605-Z产品属性
- 类型
描述
- 型号
2SJ605-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+24 |
TO-263 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
RENESAS |
25+23+ |
TO-263 |
26889 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
13+PBF |
TO-263 |
300 |
优势 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
NEW |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
NEC |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
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2SJ605-Z规格书下载地址
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2019-10-30
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