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2SJ605-Z中文资料
2SJ605-Z数据手册规格书PDF详情
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A)
• Low input capacitance
Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
• Built-in gate protection diode
2SJ605-Z产品属性
- 类型
描述
- 型号
2SJ605-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
更新时间：2025-10-5 9:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
13+P |
TO-263 |
548 |
深圳原装进口无铅现货 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
548 |
只做原厂渠道 可追溯货源 |
|||
RENESAS/瑞萨 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS |
25+23+ |
TO-263 |
26889 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
13+PBF |
TO-263 |
300 |
优势 |
|||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS |
23+24 |
TO-263 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
RENESAS |
13+ |
TO-263 |
548 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2SJ605-Z 芯片相关型号
Datasheet数据表PDF页码索引
- P1
- P2
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- P100
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- P104
- P105
