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型号	功能描述	生产厂家企业	LOGO
2SJ471	Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ471	Silicon P Channel DV-L MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ471	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SJ471-E	Silicon P Channel DV-L MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ472-01L	Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier	FUJI 富士通	FUJI
2SJ473-01L	Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier	FUJI 富士通	FUJI
2SJ474-01L	Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power amplifier	FUJI 富士通	FUJI
2SJ475-01	FAP-III Series Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High forward Transconductance ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier	FUJI 富士通	FUJI
2SJ476-01L	Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power	FUJI 富士通	FUJI
2SJ477-01MR	Power MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Applications Switching regulators DC-DC converters General purpose power	FUJI 富士通	FUJI
2SJ479	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ479	Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ479L	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ479L	Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ479L-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ479S	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ479S	Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ479STL-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching	RENESAS 瑞萨	RENESAS
2SJ472-01L	P-CHANNEL SILICON POWER MOSFET 文件：249.39 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ472-01L	Power MOSFET	FUJI 富士通	FUJI
2SJ472-01L_06	P-CHANNEL SILICON POWER MOSFET 文件：249.39 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ472-01S	P-CHANNEL SILICON POWER MOSFET 文件：249.39 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ472-01S	Power MOSFET	FUJI 富士通	FUJI
2SJ473-01L	Power MOSFET	FUJI 富士通	FUJI
2SJ473-01L	P-CHANNEL SILICON POWER MOSFET 文件：241.72 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ473-01L	P-Channel 60-V (D-S) MOSFET 文件：989.58 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ473-01L.	P-Channel 4 0 V (D-S) MOSFET 文件：976.36 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ473-01L_06	P-CHANNEL SILICON POWER MOSFET 文件：241.72 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ473-01S	P-CHANNEL SILICON POWER MOSFET 文件：241.72 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ474-01L	P-CHANNEL SILICON POWER MOSFET 文件：543.81 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ474-01L_05	P-CHANNEL SILICON POWER MOSFET 文件：543.81 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ474-01S	P-CHANNEL SILICON POWER MOSFET 文件：543.81 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ475-01	P-CHANNEL SILICON POWER MOSFET 文件：300.88 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ475-01_06	P-CHANNEL SILICON POWER MOSFET 文件：300.88 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ476-01L	P-CHANNEL SILICON POWER MOSFET 文件：308.29 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ476-01L_06	P-CHANNEL SILICON POWER MOSFET 文件：308.29 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ476-01S	P-CHANNEL SILICON POWER MOSFET 文件：308.29 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ477-01MR	P-CHANNEL SILICON POWER MOSFET 文件：299.36 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ477-01MR	Isc P-Channel MOSFET Transistor 文件：243.33 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SJ477-01MR	P-Channel 60 V (D-S) MOSFET 文件：932.89 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ477-01MR_06	P-CHANNEL SILICON POWER MOSFET 文件：299.36 Kbytes Page：4 Pages	FUJI 富士通	FUJI
2SJ479(L)_15	Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS

2SJ47产品属性

类型
描述
型号
2SJ47
制造商
HITACHI
制造商全称
Hitachi Semiconductor
功能描述
Silicon P Channel DV-L MOS FET High Speed Power Switching

2SJ47供应商更多...

更新时间：2026-3-11 9:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SJ474	FUJI	2023+	TO262	58000	进口原装,现货热卖	询价
深圳市博中泰实业有限公司	2SJ473-01L=J473	FUJITSU/富士通	24+	TO-251	60000		询价
深圳市凯睿晟科技有限公司	2SJ473-01S-TB16R	FUJITSU/富士通	21+	TO252	2366	百域芯优势实单必成可开13点增值税	询价
深圳市昌和盛利电子有限公司	2SJ474	FUJI	26+	TO-263/262	9516	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市宇创芯科技有限公司	2SJ473-01S-TB16R	FUJITSU/富士通	24+	TO252	9600	原装现货,优势供应,支持实单!	询价
深圳市金芯世纪电子有限公司	2SJ473-01S	FUJITSU/富士通	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
深圳市宝芯创电子有限公司	2SJ473-01S-TB16R	FUJITSU/富士通	2026+	TO252	27207	全新原装现货,可出样品,可开增值税发票	询价
深圳市威雅利发展有限公司	2SJ473-01L	FUJITSU	06+	TO-251	10000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市富芯乐电子科技有限公司	2SJ473-01S-TB16R	FUJIST	24+	TO252	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市一线半导体有限公司	2SJ473-01S	FUJI	24+	SOT-252	42000		询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SJ47产品属性

2SJ47供应商更多...

2SJ47芯片相关品牌

2SJ47规格书下载地址

2SJ47参数引脚图相关

2SJ47数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD669AL-TO92NLB-C-TG_UTC代理商

2SD882SL-TO92B-P-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SK1485-T1

2SK1985

DdatasheetPDF页码索引