位置：首页 > IC中文资料第5602页 > 2SJ47
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 |  |   | |
SiliconPChannelDV-LMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconPChannelDV-LMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
PowerMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Avalanche-proof Applications Applications Switchingregulators DC-DCconverters Generalpurposepoweramplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
PowerMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Avalanche-proof Applications Applications Switchingregulators DC-DCconverters Generalpurposepoweramplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
PowerMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Avalanche-proof Applications Applications Switchingregulators DC-DCconverters Generalpurposepoweramplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
FAP-IIISeries Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●HighforwardTransconductance ●Avalanche-proof Applications ●Switchingregulators ●DC-DCconverters ●Generalpurposepoweramplifier | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
PowerMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Avalanche-proof Applications Applications Switchingregulators DC-DCconverters Generalpurposepower | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
PowerMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower HighforwardTransconductance Avalanche-proof Applications Applications Switchingregulators DC-DCconverters Generalpurposepower | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistanceRDS(on)=25mΩtyp. •4Vgatedrivedevices. •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-CHANNELSILICONPOWERMOSFET 文件：249.39 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：249.39 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：249.39 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：241.72 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-Channel60-V(D-S)MOSFET 文件：989.58 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
P-Channel40V(D-S)MOSFET 文件：976.36 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-CHANNELSILICONPOWERMOSFET 文件：241.72 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：241.72 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：543.81 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：543.81 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：543.81 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：300.88 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：300.88 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：308.29 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：308.29 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：308.29 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
P-CHANNELSILICONPOWERMOSFET 文件：299.36 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
IscP-ChannelMOSFETTransistor 文件：243.33 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
P-Channel60V(D-S)MOSFET 文件：932.89 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-CHANNELSILICONPOWERMOSFET 文件：299.36 Kbytes Page：4 Pages | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
SiliconPChannelMOSFET 文件：111.15 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SJ47产品属性
- 类型
描述
- 型号
2SJ47
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel DV-L MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
23+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FUJI |
2020+ |
TO-251 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FUJITSU |
06+ |
TO-251 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FUJITSU |
2023+ |
TO-251 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
FUJITSU/富士通 |
21+ |
TO-251 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
VB |
TO-251 |
608900 |
原包原标签100%进口原装常备现货! |
||||
FUJITSU/富士通 |
2024+实力库存 |
TO-251 |
10000 |
只做原厂渠道 可追溯货源 |
|||
FUJI |
SOT-252 |
42000 |
|||||
FUJITSU-富士通 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
富士通FUJITSU |
23+ |
TO-251 |
33500 |
全新原装真实库存含13点增值税票! |
2SJ47芯片相关品牌
2SJ47规格书下载地址
2SJ47参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
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- 3q1
- 3g汽车
- 3579
- 35001
- 3477
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- 303c
- 2SJ502
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- 2SJ499
- 2SJ498
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- 2SJ486
- 2SJ485
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- 2SJ483
- 2SJ48
- 2SJ479S
- 2SJ479L
- 2SJ479
- 2SJ476-01LSC
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- 2SJ476-01L
- 2SJ476-01
- 2SJ475-01SC
- 2SJ475-01_06
- 2SJ475-01
- 2SJ474-01S
- 2SJ474-01L_05
- 2SJ474-01L
- 2SJ474-01
- 2SJ473-01S
- 2SJ473-01LSC
- 2SJ473-01L_06
- 2SJ473-01L
- 2SJ473-01
- 2SJ472-01S
- 2SJ472-01LSC
- 2SJ471(E)
- 2SJ471
- 2SJ469
- 2SJ468
- 2SJ467
- 2SJ466-TL-E
- 2SJ466
- 2SJ465_07
- 2SJ465
- 2SJ464_09
- 2SJ464_07
- 2SJ464(F)
- 2SJ464
- 2SJ463A-T1-A
- 2SJ463A-T1
- 2SJ463A
- 2SJ463
- 2SJ462-T1-AZ
- 2SJ462-T1(AZ)
- 2SJ462
- 2SJ461-T1B-A
- 2SJ461-A
- 2SJ461
- 2SJ460
- 2SJ459
- 2SJ458
- 2SJ456
- 2SJ455
- 2SJ452
- 2SJ451
- 2SJ450
- 2SJ449
- 2SJ448
- 2SJ440
- 2SJ439
- 2SJ438
2SJ47数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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