| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ479 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | |
2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SJ479产品属性
- 类型
描述
- 封装类型：
LDPAK(L)/TO-262
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-30
- ID (A)：
-30
- RDS (ON)(mΩ) 最大值@4V或4.5V：
60
- RDS (ON)(mΩ) 最大值@10V或8V：
35
- Ciss (pF) 典型值：
1700
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
50
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+ |
TO263 |
28000 |
原装正品，可来电咨询 |
|||
RENESAS |
17+ |
TO-263 |
76 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
23+ |
TO-252 |
50 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
TO-252 |
50 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
25+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
SOT-263 |
9000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
恩XP |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
HITACHI |
24+ |
TO-263 |
36800 |
2SJ479规格书下载地址
2SJ479参数引脚图相关
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- 5000
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- 2SJ479(L)|2SJ479(S)
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- 2SJ476-01
- 2SJ475-01SC
- 2SJ475-01_06
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- 2SJ456
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- 2SJ449
- 2SJ448
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- 2SJ439
2SJ479数据表相关新闻
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2019-10-30
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