位置：首页 > IC中文资料第6257页 > 2SJ479STL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ479STL-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ479STL-E产品属性
- 类型
描述
- 型号
2SJ479STL-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Hitachi |
25+23+ |
Sot-89 |
28276 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
24+ |
SOT89 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
HITACHI |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
24+ |
2000 |
||||||
Hitachi |
26+ |
PM2.5 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
23+ |
UPAK |
10000 |
原装正品,假一罚十 |
|||
HITACHI |
2023+ |
TO-3 |
50000 |
原装现货 |
|||
HITACHI |
23+ |
TO-3 |
5000 |
专注配单,只做原装进口现货 |
|||
RENESAS/瑞萨 |
22+ |
SOT-23 |
20000 |
只做原装 |
2SJ479STL-E规格书下载地址
2SJ479STL-E参数引脚图相关
- 500t
- 5000
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- 2SJ479(L)|2SJ479(S)
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2SJ479STL-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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