型号 功能描述 生产厂家 企业 LOGO 操作
2SJ479L

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

2SJ479L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

2SJ479L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

2SJ479L产品属性

  • 类型

    描述

  • 型号

    2SJ479L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-3-14 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
TO-252
20000
公司只有原装 品质保证
HITACHI
24+
TO-263
36800
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
2511
TO-252
50
电子元器件采购降本30%!原厂直采,砍掉中间差价
恩XP
23+
SOD-323
69820
终端可以免费供样,支持BOM配单!
RENESAS
25+
TO-252
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-252
16900
原装正品现货支持实单
HITACHI/日立
1925+
SOT-89
12500
原装现货价格优势可供更多可出样
RENESAS
23+
TO-252
50
全新原装正品现货,支持订货

2SJ479L数据表相关新闻