位置：首页 > IC中文资料第8121页 > 2SJ479L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ479L | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | |
2SJ479L | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ479L产品属性
- 类型
描述
- 型号
2SJ479L
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
HITACHI |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
||||
HITACHI |
24+ |
TO-263 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
HITACHI/日立 |
1925+ |
SOT-89 |
12500 |
原装现货价格优势可供更多可出样 |
|||
RENESAS |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SJ479L规格书下载地址
2SJ479L参数引脚图相关
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2019-10-30
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