位置：首页 > IC中文资料第8121页 > 2SJ479L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ479L | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | |
2SJ479L | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ479L产品属性
- 类型
描述
- 型号
2SJ479L
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
恩XP |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
||||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
HITACHI |
24+ |
TO-263 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
2SJ479L规格书下载地址
2SJ479L参数引脚图相关
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2019-10-30
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