型号 功能描述 生产厂家 企业 LOGO 操作
2SJ479L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:111.15 Kbytes Page:10 Pages

RENESAS

瑞萨

2SJ479L-E产品属性

  • 类型

    描述

  • 型号

    2SJ479L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 30V 30A 3-Pin(3+Tab) LDPAK(L) Box Bulk

更新时间:2026-1-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2511
SOT-23
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS/瑞萨
23+
SOT-263
9000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEXPERIA/安世
23+
SOD323
69820
终端可以免费供样,支持BOM配单!
HITACHI/日立
1925+
SOT-89
12500
原装现货价格优势可供更多可出样
HITACHI
23+
TO-3
5000
专注配单,只做原装进口现货
HITACHI
25+
SOT-263
2987
只售原装自家现货!诚信经营!欢迎来电
Hitachi
25+23+
Sot-89
28276
绝对原装正品全新进口深圳现货
HITACHI
24+
TO-263
36800
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
HITACHI
24+
TO-263
3100
只做原装正品现货 欢迎来电查询15919825718

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