型号 功能描述 生产厂家 企业 LOGO 操作
2SJ479L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:111.15 Kbytes Page:10 Pages

RENESAS

瑞萨

2SJ479L-E产品属性

  • 类型

    描述

  • 型号

    2SJ479L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 30V 30A 3-Pin(3+Tab) LDPAK(L) Box Bulk

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
22+
SOT-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
HITACHI
20+
SOT-89
43000
原装优势主营型号-可开原型号增税票
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
HITACHI
24+
TO-263
3100
只做原装正品现货 欢迎来电查询15919825718
HITACHI
24+
TO-263
36800
HITACHI
23+
TO-3
5000
专注配单,只做原装进口现货
HITACHI
25+
SOT-263
2987
只售原装自家现货!诚信经营!欢迎来电
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
23+
UPAK
10000
原装正品,假一罚十

2SJ479L-E数据表相关新闻