位置：首页 > IC中文资料第1314页 > 2SJ479L-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ479L-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ479L-E产品属性
- 类型
描述
- 型号
2SJ479L-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 30V 30A 3-Pin(3+Tab) LDPAK(L) Box Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HITACHI |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
30000 |
只做正品原装现货 |
|||
RENESAS/瑞萨 |
21+ |
SOT89 |
19600 |
一站式BOM配单 |
|||
SY/江苏顺烨 |
24+ |
SOT89 |
60000 |
||||
RENESAS |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HIT |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HITACHI |
24+ |
TO-263 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ479L-E芯片相关品牌
2SJ479L-E规格书下载地址
2SJ479L-E参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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