NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1780 is high hFE transistor, built-in a zener diode at B-C. It is suitable for use to operate from IC without predriver, such as hammer or motor driver.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Very low VCE(sat). VCE(sat)

NPN Silicon Plastic Encapsulated Transistor

0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

Medium Power Transistor

Medium Power Transistor Features Very Low VCE(sat).VCE(sat)= -0.1V(Typ.) IC/IB= 500mA / 50mA High current capacity in compact package.

NPN Silicon Plastic Encapsulated Transistor

NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High breakdown, low VCE(sat),complements the 2SB1198K. Applications Medium power amplifier applications.

Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.

Power Transistor

Features ● Low VCE(sat).VCE(sat) = 0.2V(Typ.) (IC / IB= 0.5A / 50mA) ● High VCEO, VCEO=80V.

Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A • High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V • Complement to Type 2SB1258 APPLICATIONS • Driver for solenoid, relay and motor, series re

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • DARLINGTON

Darlington Transistor(짹 4A NPN)

Darlington Transistor ± 4A NPN

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • DARLINGTON

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • DARLINGTON

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor

Silicon NPN Power Transistors

DESCRIPTION • With ITO-220 package • Switching power transistor • DARLINGTON

Darlington Transistor(짹 4A NPN)

Darlington Transistor

TRANSISTOR(NPN)

32V,0.8A,General Purpose NPN Bipolar Transistor

晶体管

Medium Power Transistor

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SOT-23 Plastic-Encapsulate Transistors

文件：828.97 Kbytes Page：4 Pages

NPN Transistors

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NPN Silicon Plastic Encapsulated Transistor

文件：78.25 Kbytes Page：3 Pages

TRANSISTOR (NPN)

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Silicon Epitaxial Planar Transistor

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Silicon NPN transistor in a SOT-23 Plastic Package

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Medium Power Transistor (32V, 0.8A)

文件：53.92 Kbytes Page：4 Pages

Medium Power Transistor (32V, 0.8A)

文件：53.92 Kbytes Page：4 Pages

NPN TRANSISTOR

文件：129.46 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 32V 0.8A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Switching Transistor

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Medium Power Transistor

文件：907 Kbytes Page：4 Pages

GENERAL PURPOSE TRANSISTORS MEDIUM POWER TRANSISTOR(32V, 0.8A)

文件：484.15 Kbytes Page：7 Pages

Medium Power Transistor

文件：907 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 32V 0.8A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER NPN TRANSISTOR

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POWER NPN TRANSISTOR

文件：125.54 Kbytes Page：3 Pages