2SD1782晶体管资料
2SD1782K别名：2SD1782K三极管、2SD1782K晶体管、2SD1782K晶体三极管
2SD1782K生产厂家：TOY
2SD1782K制作材料：Si-NPN
2SD1782K性质：表面帖装型 （SMD）_低频或音频放大 （LF）_TR
2SD1782K封装形式：贴片封装
2SD1782K极限工作电压：80V
2SD1782K最大电流允许值：0.7A
2SD1782K最大工作频率：180MHZ
2SD1782K引脚数：4
2SD1782K最大耗散功率：
2SD1782K放大倍数：
2SD1782K图片代号：H-15
2SD1782Kvtest：80
2SD1782Khtest：180000000
- 2SD1782Katest：0.7
2SD1782Kwtest：0
2SD1782K代换 2SD1782K用什么型号代替：BCW66,BCX41,
2SD1782价格
参考价格：￥0.4994
型号：2SD1782KT146Q 品牌：Rohm Semiconductor 备注：这里有2SD1782多少钱，2026年最近7天走势，今日出价，今日竞价，2SD1782批发/采购报价，2SD1782行情走势销售排行榜，2SD1782报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD1782 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198 | JIANGSU 长电科技 |   | |
2SD1782 | POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll | UTC 友顺 | | |
2SD1782 | SOT-23 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198 | DGNJDZ 南晶电子 | | |
2SD1782 | Low-power pyroelectric infrared sensor signal processing chip Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power | HMSEMI 华之美半导体 | | |
2SD1782 | Bipolar Transistor The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. • High collector-emitter breakdown voltage \n• Low collector-emitter saturation voltage \n• High DC current gain; | UTC 友顺 | | |
2SD1782 | 80V,0.5A,General Purpose NPN Bipolar Transistor | GALAXY 银河微电 | | |
2SD1782 | NPN SOT-23 Bipolar Transistor | XHWD | | |
POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll | UTC 友顺 | | ||
POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll | UTC 友顺 | | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High breakdown, low VCE(sat),complements the 2SB1198K. Applications Medium power amplifier applications. | FOSHAN 蓝箭电子 | | ||
Power Transistor Features ● Low VCE(sat).VCE(sat) = 0.2V(Typ.) (IC / IB= 0.5A / 50mA) ● High VCEO, VCEO=80V. | KEXIN 科信电子 | | ||
丝印代码：AJ*；Power Transistor (80V, 0.5A) Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K. | ROHM 罗姆 | | ||
Power Transistor (80V, 0.5A) Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K. | ROHM 罗姆 | | ||
POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll | UTC 友顺 | | ||
POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll | UTC 友顺 | | ||
POWER NPN TRANSISTOR 文件：125.54 Kbytes Page：3 Pages | UTC 友顺 | | ||
POWER NPN TRANSISTOR 文件：125.54 Kbytes Page：3 Pages | UTC 友顺 | | ||
丝印代码：AJ*；Power Transistor (80V, 0.5A) 文件：67.37 Kbytes Page：4 Pages | ROHM 罗姆 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ROHM 罗姆 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ROHM 罗姆 | | ||
丝印代码：1782Q；NPN Transistor 文件：1.38832 Mbytes Page：4 Pages | PJSEMI 平晶半导体 | |
2SD1782产品属性
- 类型
描述
- PCM(W)：
0.2
- IC(A)：
0.5
- VCBO(V)：
80
- VCEO(V)：
80
- VEBO(V)：
5
- hFEMin：
120
- hFEMax：
390
- hFE@VCE(V)：
3
- hFE@IC(A)：
0.1
- VCE(sat)(V)：
0.5
- VCE(sat)\u001E@IC(A)：
0.5
- VCE(sat)\u001E@IB(A)：
0.05
- Package：
SOT-23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2025+ |
SOT23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
长电 |
25+ |
SOT-23 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
CJ/长晶 |
24+ |
SOT23 |
360000 |
原装现货 |
|||
CJ/长电 |
25+ |
SOT-23 |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CJ/长电 |
25+ |
SOT-23 |
32000 |
CJ/长电全新特价2SD1782即刻询购立享优惠#长期有货 |
|||
ROHM |
21+ |
60000 |
SMT3 (SOT-346) (SC-59) |
||||
CJ/长电/长晶 |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
长电/长晶 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
2SD1782规格书下载地址
2SD1782参数引脚图相关
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- 2SD178B
- 2SD178A
- 2SD1789
- 2SD1788
- 2SD1787
- 2SD1786
- 2SD1785
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- 2SD1782K
- 2SD1781K
- 2SD1781
- 2SD1780
- 2SD178
- 2SD1779
- 2SD1778(A)
- 2SD1778
- 2SD1777
- 2SD1776(A)
- 2SD1776
- 2SD1775(A)
- 2SD1775
- 2SD1774(A)
- 2SD1774
- 2SD1773
- 2SD1772(A)
- 2SD1772
- 2SD1771(A)
- 2SD1771
- 2SD1770A
- 2SD1770
- 2SD177
- 2SD1769
- 2SD1768(S)
- 2SD1767
- 2SD1766
- 2SD1765
- 2SD1764
- 2SD1763
- 2SD1762
- 2SD1761
- 2SD1760
- 2SD1759
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2019-2-15
DdatasheetPDF页码索引
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