Medium Power Transistor

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GENERAL PURPOSE TRANSISTORS MEDIUM POWER TRANSISTOR(32V, 0.8A)

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General BJT - 3

TRANSISTOR

NPN Silicon Plastic Encapsulated Transistor

0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

SOT-23 Plastic-Encapsulate Transistors

FEATURES Very low VCE(sat). VCE(sat)

SOT-23 Plastic-Encapsulate Transistors

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Medium Power Transistor

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三极管 / 通用三极管

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard