Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.

Power Transistor

Features ● Low VCE(sat).VCE(sat) = 0.2V(Typ.) (IC / IB= 0.5A / 50mA) ● High VCEO, VCEO=80V.

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High breakdown, low VCE(sat),complements the 2SB1198K. Applications Medium power amplifier applications.

Power Transistor (80V, 0.5A)

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三极管

Driver Transistor

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.

Driver Transistor (支持 AEC-Q101)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个