NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

低电压双极晶体管

NPN Silicon Plastic Encapsulated Transistor

0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

SOT-23 Plastic-Encapsulate Transistors

FEATURES Very low VCE(sat). VCE(sat)

SOT-23 Plastic-Encapsulate Transistors

文件：828.97 Kbytes Page：4 Pages

Medium Power Transistor

文件：324.82 Kbytes Page：2 Pages

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 3A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个