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2SC335晶体管资料

2SC335别名：2SC335三极管、2SC335晶体管、2SC335晶体三极管
2SC335生产厂家：日本冲电气工业股份公司
2SC335制作材料：Si-NPN
2SC335性质：射频/高频放大（HF）_开关管（S）
2SC335封装形式：直插封装
2SC335极限工作电压：50V
2SC335最大电流允许值：0.2A
2SC335最大工作频率：450MHZ
2SC335引脚数：3
2SC335最大耗散功率：0.25W
2SC335放大倍数：
2SC335图片代号：D-13
2SC335vtest：50
2SC335htest：450000000
2SC335atest：0.2
2SC335wtest：0.25

2SC335代换 2SC335用什么型号代替：2N4014,3DK9C,

2SC335价格

参考价格：￥2.6540

型号：2SC3356-T1B-A 品牌：CEL 备注：这里有2SC335多少钱，2025年最近7天走势，今日出价，今日竞价，2SC335批发/采购报价，2SC335行情走势销售排行榜，2SC335报价。

型号	功能描述	生产厂家企业	LOGO
2SC3352	Silicon NPN Power Transistors DESCRIPTION · With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications	SAVANTIC	SAVANTIC
2SC3352	Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications	ISC 无锡固电	ISC
2SC3353	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emiiter Sustaining Voltage-: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications.	ISC 无锡固电	ISC
2SC3354	Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) For high-frequency amplification/oscillation/mixing ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● High transition frequency fT.	Panasonic 松下	Panasonic
2SC3355	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain	UTC 友顺	UTC
2SC3355	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz	NEC 瑞萨	NEC
2SC3355	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS • Designe	ISC 无锡固电	ISC
2SC3355	Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3355	NPN Silicon Epitaxial Transistor ■ ABSTRACT The 2SC3355 is a silicon epitaxial transistor in NPN configuration. This high frequency, low noise amplifier boasts a high power gain. The transistor is encased in a compact three pin durable plastic TO-92 package.	AMMSEMI	AMMSEMI
2SC3355	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF	RENESAS 瑞萨	RENESAS
2SC3355-T	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF	RENESAS 瑞萨	RENESAS
2SC3356	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356	SOT-23 High-Frequency Amplifier Transistor	GSME 桂微	GSME
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	MAKOSEMI 美科半导体	MAKOSEMI
2SC3356	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA,	CEL	CEL
2SC3356	Low Noise and High Gain DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0	YEASHIN 亚昕科技	YEASHIN
2SC3356	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	BILIN 银河微电	BILIN
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	LUGUANG 鲁光电子	LUGUANG
2SC3356	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High	NEC 瑞萨	NEC
2SC3356	NPN Silicon Epitaxial Transistor Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	KEXIN 科信电子	KEXIN
2SC3356	High-Frequency Amplifier Transistor NPN Silicon FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain	WEITRON	WEITRON
2SC3356	isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	HTSEMI 金誉半导体	HTSEMI
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER ■ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. r	UTC 友顺	UTC
2SC3356	NPN Silicon Plastic-Encapsulate Transistor FEATURES • Power Dissipation • RoHS Compliant Product	SECOS 喜可士	SECOS
2SC3356	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356	It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside Description 2SC3356 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside. Extended bipolar process. It has high power gain, low noise figure, large dynamic range and ideal current characteristics. Use SOT-23/SC-59 SMD package, mainly used in VHF, UHF and CATV hi	LEIDITECH 雷卯电子	LEIDITECH
2SC3356	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356B	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356D	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356F	NPN Silicon Plastic Encapsulated Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SECOS 喜可士	SECOS
2SC3356-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356Q-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-R23	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R23	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356R-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356S-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-T1B	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356-T1B-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356W	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz ● High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.	BILIN 银河微电	BILIN
2SC3357	NPN Silicon RF Transistor Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz	KEXIN 科信电子	KEXIN
2SC3357	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N	NEC 瑞萨	NEC
2SC3357	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS • Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3357	NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357	Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low noise and high gain, large PC in small package. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3357	SOT-89-3L Plastic-Encapsulate Transistors Features Low noise and high gain High power gain Large Ptot Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	DGNJDZ 南晶电子	DGNJDZ
2SC3357	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot	YFWDIODE 佑风微	YFWDIODE
2SC3357	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×	RENESAS 瑞萨	RENESAS
2SC3357A	NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357B	NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY

2SC335产品属性

类型
描述
型号
2SC335
制造商
Distributed By MCM
功能描述
SUB ONLY MATS.TRANS. TO-220FA800V 1.5A 25W BCE

2SC335供应商更多...

更新时间：2025-12-25 11:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	2SC3357	NEC	15+	SOT-89	11560	全新原装,现货库存,长期供应	询价
深圳市赛美科科技有限公司	2SC3357	NEC		SOT-89	6500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SC3357	NEC	25+	SOT-23	880000	明嘉莱只做原装正品现货	询价
深圳市能元时代电子有限公司	2SC3357-T1	RENESAS	23+	SOT89	250000	##公司100%原装现货,假一罚十!可含税13%免费提供样	询价
深圳市百诺芯科技有限公司	2SC3357	NEC	23+	TO-59	8510	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	2SC3357	RENESAS/瑞萨	2447	SOT-89	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市莱克讯科技有限公司	2SC3357	NEC	1922+	SOT-89	35689	原装进口现货库存专业工厂研究所配单供货	询价
深圳市威尔健半导体有限公司	2SC3357	KEFAN/科范微	23+	SOT-89	50000	全新原装正品现货,支持订货	询价
深圳市华斯顿科技有限公司	2SC3357	NEC	25+23+	Sot-89	34463	绝对原装正品全新进口深圳现货	询价
千层芯半导体(深圳)有限公司	2SC3357	NEC	24+	SOT89	18700		询价

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2SC335规格书下载地址

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