2SC3357晶体三极管集成电路资料市场行情分销商-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SC335

2SC335晶体管资料

2SC335别名：2SC335三极管、2SC335晶体管、2SC335晶体三极管
2SC335生产厂家：日本冲电气工业股份公司
2SC335制作材料：Si-NPN
2SC335性质：射频/高频放大（HF）_开关管（S）
2SC335封装形式：直插封装
2SC335极限工作电压：50V
2SC335最大电流允许值：0.2A
2SC335最大工作频率：450MHZ
2SC335引脚数：3
2SC335最大耗散功率：0.25W
2SC335放大倍数：
2SC335图片代号：D-13
2SC335vtest：50
2SC335htest：450000000
2SC335atest：0.2
2SC335wtest：0.25

2SC335代换 2SC335用什么型号代替：2N4014,3DK9C,

2SC335价格

参考价格：￥2.6540

型号：2SC3356-T1B-A 品牌：CEL 备注：这里有2SC335多少钱，2026年最近7天走势，今日出价，今日竞价，2SC335批发/采购报价，2SC335行情走势销售排行榜，2SC335报价。

型号	功能描述	生产厂家企业	LOGO
2SC3352	Silicon NPN Power Transistors DESCRIPTION · With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications	SAVANTIC	SAVANTIC
2SC3352	Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications	ISC 无锡固电	ISC
2SC3353	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emiiter Sustaining Voltage-: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications.	ISC 无锡固电	ISC
2SC3354	Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) For high-frequency amplification/oscillation/mixing ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● High transition frequency fT.	PANASONIC 松下	PANASONIC
2SC3354	Silicon NPN epitaxial planer type Transistor For high-frequency amplification/oscillation/mixing■ ● Optimum for high-density mounting.\n● Allowing supply with the radial taping.\n● High transition frequency fT.;	PANASONIC 松下	PANASONIC
2SC3355	Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 12V(Min) · High Power Gain · Low Noise and High Gain APPLICATIONS · VHF · UHF · CATV	ISC 无锡固电	ISC
2SC3355	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain	UTC 友顺	UTC
2SC3355	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz	NEC 瑞萨	NEC
2SC3355	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS • Designe	ISC 无锡固电	ISC
2SC3355	Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3355	NPN Silicon Epitaxial Transistor ■ ABSTRACT The 2SC3355 is a silicon epitaxial transistor in NPN configuration. This high frequency, low noise amplifier boasts a high power gain. The transistor is encased in a compact three pin durable plastic TO-92 package.	AMMSEMI	AMMSEMI
2SC3355	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF	RENESAS 瑞萨	RENESAS
2SC3355-T	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF	RENESAS 瑞萨	RENESAS
2SC3356	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356	SOT-23 High-Frequency Amplifier Transistor	GSME 桂微	GSME
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	MAKOSEMI 美科半导体	MAKOSEMI
2SC3356	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA,	CEL	CEL
2SC3356	Low Noise and High Gain DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0	YEASHIN 亚昕科技	YEASHIN
2SC3356	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	BILIN 银河微电	BILIN
2SC3356	丝印代码：R23/R24/R25；Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	LUGUANG 鲁光电子	LUGUANG
2SC3356	丝印代码：R23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High	NEC 瑞萨	NEC
2SC3356	NPN Silicon Epitaxial Transistor Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	KEXIN 科信电子	KEXIN
2SC3356	High-Frequency Amplifier Transistor NPN Silicon FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain	WEITRON	WEITRON
2SC3356	isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	HTSEMI 金誉半导体	HTSEMI
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER ■ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. r	UTC 友顺	UTC
2SC3356	NPN Silicon Plastic-Encapsulate Transistor FEATURES • Power Dissipation • RoHS Compliant Product	SECOS 喜可士	SECOS
2SC3356	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356	Small Signal Silicon Bipolars NPN Silicon Amplifier and Oscillator Transistor (Same as NE85633)	RENESAS 瑞萨	RENESAS
2SC3356	It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside Description 2SC3356 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside. Extended bipolar process. It has high power gain, low noise figure, large dynamic range and ideal current characteristics. Use SOT-23/SC-59 SMD package, mainly used in VHF, UHF and CATV hi	LEIDITECH 雷卯电子	LEIDITECH
2SC3356	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356B	丝印代码：R24；NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356D	丝印代码：R25；NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356F	NPN Silicon Plastic Encapsulated Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SECOS 喜可士	SECOS
2SC3356-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356Q-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-R23	丝印代码：R23；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R23	丝印代码：R23；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	丝印代码：R24；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	丝印代码：R24；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	丝印代码：R25；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	丝印代码：R25；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	丝印代码：R26；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	丝印代码：R26；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356R-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356S-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-T1B	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356-T1B-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356W	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz ● High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.	BILIN 银河微电	BILIN
2SC3357	丝印代码：RE；NPN Silicon RF Transistor Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz	KEXIN 科信电子	KEXIN
2SC3357	丝印代码：RE；NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N	NEC 瑞萨	NEC
2SC3357	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS • Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3357	NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357	Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low noise and high gain, large PC in small package. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3357	SOT-89-3L Plastic-Encapsulate Transistors Features Low noise and high gain High power gain Large Ptot Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	DGNJDZ 南晶电子	DGNJDZ
2SC3357	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot	YFWDIODE 佑风微	YFWDIODE

2SC335产品属性

类型
描述
BVCEO(V)：
12
BVCBO(V)：
20
IC(A)：
0.10
HFE_MIN.：
50
HFE_MAX.：
300
HFE test_IC(mA)：
20
HFE test_VCE(V)：
10.0
ft (GHz)_TYP：
7
ft (GHz)test_VCE：
10
ft (GHz)test_IC(mA)：
20
Package：
TO-92 SOT-89 SOT-323

2SC335供应商更多...

更新时间：2026-5-15 10:56:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SC3357	NEC	2023+	SOT89	58000	进口原装,现货热卖	询价
深圳市科翼源电子有限公司	2SC3357	NEC	23+	SOT89	2644	原厂原装正品	询价
洪芯国际半导体（深圳）有限公司	2SC3357	NEC	26+	Sot-243	86720	全新原装正品价格最实惠假一赔百	询价
深圳市富利微电子科技有限公司	2SC3357-T1	RENESAS/瑞萨	25+	SOT89	33500	全新进口原装现货,假一罚十	询价
深圳市华斯顿科技有限公司	2SC3357	NEC	25+23+	Sot-89	34463	绝对原装正品全新进口深圳现货	询价
深圳诚思涵科技有限公司	2SC3357	RENESAS	17+	SOT-89	60000	保证进口原装可开17%增值税发票	询价
瀚佳科技(深圳)有限公司	2SC3357-T1	NEC	24+	SOT223	9800	一级代理/全新原装现货/长期供应!	询价
上海凌岳电子科技有限公司（上海涵恩科技）	2SC3357		2023+	SOT89	3000	进口原装现货	询价
深圳市高捷芯城科技有限公司	2SC3357-T1	Renesas(瑞萨)	24+	标准封装	10097	支持大陆交货,美金交易。原装现货库存。	询价
深圳市正纳电子有限公司	2SC3357-T1-A	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价

2SC335芯片相关品牌

2SC335规格书下载地址

2SC335参数引脚图相关

2SC335数据表相关新闻

2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-31
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-23
2SC380TM-O
只做原装假一赔十
2020-11-14
2SC3671-B,T2F(J
产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-5
2SC2334中文资料
2SC2334中文资料
2019-2-18
2SC2859中文资料
2SC2859中文资料
2019-2-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SC335晶体管资料

2SC335价格

2SC335产品属性

2SC335供应商更多...

2SC335芯片相关品牌

2SC335规格书下载地址

2SC335参数引脚图相关

2SC335数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC2334中文资料

2SC2859中文资料

DdatasheetPDF页码索引