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2SC3356晶体管资料

2SC3356别名：2SC3356三极管、2SC3356晶体管、2SC3356晶体三极管
2SC3356生产厂家：日本日电公司
2SC3356制作材料：Si-NPN
2SC3356性质：超高频/特高频（UHF）
2SC3356封装形式：贴片封装
2SC3356极限工作电压：20V
2SC3356最大电流允许值：0.1A
2SC3356最大工作频率：7GHZ
2SC3356引脚数：3
2SC3356最大耗散功率：0.2W
2SC3356放大倍数：
2SC3356图片代号：H-15
2SC3356vtest：20
2SC3356htest：7000000000
2SC3356atest：0.1
2SC3356wtest：0.2

2SC3356代换 2SC3356用什么型号代替：2SC3513,2SC3606,2SC3829,

2SC3356价格

参考价格：￥2.6540

型号：2SC3356-T1B-A 品牌：CEL 备注：这里有2SC3356多少钱，2025年最近7天走势，今日出价，今日竞价，2SC3356批发/采购报价，2SC3356行情走势销售排行榜，2SC3356报价。

型号	功能描述	生产厂家&企业	LOGO
2SC3356	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High	NEC 瑞萨	NEC
2SC3356	isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3356	NPN Silicon Epitaxial Transistor Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	KEXIN 科信电子	KEXIN
2SC3356	High-Frequency Amplifier Transistor NPN Silicon FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain	WEITRON	WEITRON
2SC3356	NPN Silicon Plastic-Encapsulate Transistor FEATURES • Power Dissipation • RoHS Compliant Product	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	HTSEMI 金誉半导体	HTSEMI
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER ■ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. r	UTC 友顺	UTC
2SC3356	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356	SOT-23 High-Frequency Amplifier Transistor	GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司	GSME
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	BILIN 银河微电	BILIN
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	LUGUANG 鲁光电子	LUGUANG
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司	MAKOSEMI
2SC3356	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA,	CEL California Eastern Labs	CEL
2SC3356	Low Noise and High Gain DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0	YEASHIN 亚昕科技	YEASHIN
2SC3356	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3356	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微电子	YFWDIODE
2SC3356	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356	It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside Description 2SC3356 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside. Extended bipolar process. It has high power gain, low noise figure, large dynamic range and ideal current characteristics. Use SOT-23/SC-59 SMD package, mainly used in VHF, UHF and CATV hi	LEIDITECH 雷卯电子	LEIDITECH
2SC3356	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356	NPN Plastic-Encapsulate Transistors 文件：634.15 Kbytes Page：4 Pages	JINGHENG 晶恒	JINGHENG
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：211.94 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356	NPN Silicon RF Transistor 文件：200.75 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356B	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356D	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356F	NPN Silicon Plastic Encapsulated Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SC3356-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356Q-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-R23	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微电子	YFWDIODE
2SC3356-R23	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微电子	YFWDIODE
2SC3356-R25	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微电子	YFWDIODE
2SC3356-R25	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微电子	YFWDIODE
2SC3356R-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356S-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-T1B	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356-T1B-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356W	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz ● High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.	BILIN 银河微电	BILIN
2SC3356_09	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_11	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：211.94 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_15	NPN Silicon RF Transistor 文件：200.75 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
2SC3356_15	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：248.83 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_15	TRANSISTOR (NPN) 文件：128.69 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SC3356-3	NPN Transistors 文件：1.31899 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356A	NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356AB	NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356AC	NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356G-X-AE3-R	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356-HF	NPN Transistors 文件：1.309 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356-HF-3	NPN Transistors 文件：1.41498 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356K	NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356KB	NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356KC	NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356KD	NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356L-A	GENERAL PURPOSE TRANSISTOR, NPN SILICON RF TRANSISTOR 文件：322.39 Kbytes Page：6 Pages	AITSEMI 创瑞科技	AITSEMI

2SC3356产品属性

类型
描述
型号
2SC3356
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SC3356供应商更多...

更新时间：2025-8-7 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SC3356R25	Renesas(瑞萨)	24+	标准封装	37048	支持大陆交货,美金交易。原装现货库存。	询价
上海意淼电子科技有限公司	2SC3356	NEC	23+	SOT23	12000	全新原装假一赔十	询价
中天科工半导体（深圳）有限公司	2SC3356-T1-A	RENESAS/瑞萨	25+	SOT-23	12455	RENESAS/瑞萨原装特价2SC3356-T1-A即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	2SC3356-T1B	RENESAS	2430+	SOT23-3	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市正迈科技有限公司	2SC3356-T1B-A	RENESAS□□□	23+	SOT23-3	35800	原装进口瑞萨代理经销正迈科技	询价
深圳市力拓辉电子有限公司	2SC3356-L	Renesas	21+	-	7	全新原装鄙视假货	询价
深圳市讯顺达科技有限公司	2SC3356G-B-AE3-R	UTC(友顺)	24+/25+	SOT-23	3000	UTC原厂一级代理商,价格优势!	询价
深圳市正纳电子有限公司	2SC3356-T1B-AR25	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
标准国际(香港)有限公司	2SC3356	2SC3356		8460	8460		询价
深圳市豪迈兴电子有限公司	2SC3356		24+	SOT-23	4231	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

2SC3356芯片相关品牌

2SC3356规格书下载地址

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2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-31
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2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-23
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只做原装假一赔十
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产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2SC2859中文资料
2019-2-18

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2SC3356晶体管资料

2SC3356价格

2SC3356产品属性

2SC3356供应商更多...

2SC3356芯片相关品牌

2SC3356规格书下载地址

2SC3356参数引脚图相关

2SC3356数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC2334中文资料

2SC2859中文资料

DdatasheetPDF页码索引