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2SC3356晶体管资料

2SC3356别名：2SC3356三极管、2SC3356晶体管、2SC3356晶体三极管
2SC3356生产厂家：日本日电公司
2SC3356制作材料：Si-NPN
2SC3356性质：超高频/特高频（UHF）
2SC3356封装形式：贴片封装
2SC3356极限工作电压：20V
2SC3356最大电流允许值：0.1A
2SC3356最大工作频率：7GHZ
2SC3356引脚数：3
2SC3356最大耗散功率：0.2W
2SC3356放大倍数：
2SC3356图片代号：H-15
2SC3356vtest：20
2SC3356htest：7000000000
2SC3356atest：0.1
2SC3356wtest：0.2

2SC3356代换 2SC3356用什么型号代替：2SC3513,2SC3606,2SC3829,

2SC3356价格

参考价格：￥2.6540

型号：2SC3356-T1B-A 品牌：CEL 备注：这里有2SC3356多少钱，2026年最近7天走势，今日出价，今日竞价，2SC3356批发/采购报价，2SC3356行情走势销售排行榜，2SC3356报价。

型号	功能描述	生产厂家企业	LOGO
2SC3356	丝印代码：R23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High	NEC 瑞萨	NEC
2SC3356	isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3356	NPN Silicon Epitaxial Transistor Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	KEXIN 科信电子	KEXIN
2SC3356	High-Frequency Amplifier Transistor NPN Silicon FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain	WEITRON	WEITRON
2SC3356	NPN Silicon Plastic-Encapsulate Transistor FEATURES • Power Dissipation • RoHS Compliant Product	SECOS 喜可士	SECOS
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	HTSEMI 金誉半导体	HTSEMI
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER ■ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. r	UTC 友顺	UTC
2SC3356	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356	SOT-23 High-Frequency Amplifier Transistor	GSME 桂微	GSME
2SC3356	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	BILIN 银河微电	BILIN
2SC3356	丝印代码：R23/R24/R25；Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.	LUGUANG 鲁光电子	LUGUANG
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SC3356	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	MAKOSEMI 美科半导体	MAKOSEMI
2SC3356	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA,	CEL	CEL
2SC3356	Low Noise and High Gain DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0	YEASHIN 亚昕科技	YEASHIN
2SC3356	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3356	NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356	NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356	It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside Description 2SC3356 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside. Extended bipolar process. It has high power gain, low noise figure, large dynamic range and ideal current characteristics. Use SOT-23/SC-59 SMD package, mainly used in VHF, UHF and CATV hi	LEIDITECH 雷卯电子	LEIDITECH
2SC3356	NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356	NPN Plastic-Encapsulate Transistors 文件：634.15 Kbytes Page：4 Pages	JINGHENG 晶恒	JINGHENG
2SC3356	高频三极管	MXTronics	MXTronics
2SC3356	晶体管	JSCJ 长晶科技	JSCJ
2SC3356	Transistor	GoalTop	GoalTop
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：211.94 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356	NPN Silicon RF Transistor 文件：200.75 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
2SC3356	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356B	丝印代码：R24；NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356D	丝印代码：R25；NPN Silicon RF Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356F	NPN Silicon Plastic Encapsulated Transistor FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain	SECOS 喜可士	SECOS
2SC3356-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356Q-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-R23	丝印代码：R23；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R23	丝印代码：R23；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	丝印代码：R24；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R24	丝印代码：R24；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	丝印代码：R25；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356-R25	丝印代码：R25；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	丝印代码：R26；NPN Transistors Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	EVVOSEMI 翊欧	EVVOSEMI
2SC3356-R26	丝印代码：R26；NPN Transistors Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz	YFWDIODE 佑风微	YFWDIODE
2SC3356R-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356S-G	General Purpose Transistor Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.	COMCHIP 典琦	COMCHIP
2SC3356-T1B	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356-T1B-A	NPN Silicon RF Transistor NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz	RENESAS 瑞萨	RENESAS
2SC3356W	Silicon Epitaxial Planar Transistor FEATURES ● Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz ● High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.	BILIN 银河微电	BILIN
2SC3356_09	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_11	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：211.94 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_15	NPN Silicon RF Transistor 文件：200.75 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
2SC3356_15	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：248.83 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356_15	TRANSISTOR (NPN) 文件：128.69 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SC3356-3	NPN Transistors 文件：1.31899 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356A	NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356AB	丝印代码：R24；NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356AC	丝印代码：R25；NPN SILICON RF TRANSISTOR 文件：512.19 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356G-X-AE3-R	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：197.13 Kbytes Page：4 Pages	UTC 友顺	UTC
2SC3356-HF	NPN Transistors 文件：1.309 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356-HF-3	NPN Transistors 文件：1.41498 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3356K	NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3356KB	丝印代码：R24；NPN Silicon RF Transistor 文件：829.39 Kbytes Page：3 Pages	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY

2SC3356产品属性

类型
描述
Ptot(W)：
0.2
IC(A)：
0.1
Vcbo(V)：
20
Vceo(V)：
12
Vebo(V)：
3
Icbo(μA)：
1
Vcb(V)：
10
Vcet(sat)(V)：
0.3
Vcet(sat)_Ic(mA)：
50
Vcet(sat)_Ib(mA)：
5
hFE：
10-250
hFE_Vce(V)：
10
hFE_Ic(mA)：
20
Package：
SOT-23

2SC3356供应商更多...

更新时间：2026-5-15 9:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	2SC3356-R25	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
深圳市金华微盛电子有限公司	2SC3356-T1B-A	RENESAS/瑞萨	2019+	SC59	78550	原厂渠道可含税出货	询价
深圳市正纳电子有限公司	2SC3356-T1B-AR25	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市诚利顺电子科技有限公司	2SC3356R25/R24	NEC	25+	SOT23	6500	十七年专营原装现货一手货源,样品免费送	询价
深圳市顺芯诚电子有限公司	2SC3356-T1B/JM	NEC	10+	SOT-23	635	优势现货	询价
瀚佳科技(深圳)有限公司	2SC3356-T1B-A	RENESAS	24+	SOT23	9700	绝对原装正品现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	2SC3356-T1B-AR25	RENESAS	23+	SOT-23	150000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市坤融电子科技有限公司	2SC3356-T1B-A/R25	NEC	2025+	SOT23-3	4959	原装进口价格优请找坤融电子!	询价
上海鑫科润电子科技有限公司	2SC3356-T1B-A	RENESAS	14+	SOT23	12000	原装进口现货,一站式服务,可开17%增票18916238831	询价
深圳市和悦电子贸易有限公司	2SC3356-T1B-A	RENESAS		SOT-23	50000		询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SC3356晶体管资料

2SC3356价格

2SC3356产品属性

2SC3356供应商更多...

2SC3356芯片相关品牌

2SC3356规格书下载地址

2SC3356参数引脚图相关

2SC3356数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

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DdatasheetPDF页码索引