丝印代码：R25；NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

晶体三极管

12V,0.1A,General Purpose NPN Bipolar Transistor

12V,0.1A,General Purpose Dual NPN Bipolar Transistor

丝印代码：R23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

NPN Silicon Plastic Encapsulated Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

Silicon Epitaxial Planar Transistor

FEATURES ● Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz ● High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.