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2SC3357晶体管资料

2SC3357别名：2SC3357三极管、2SC3357晶体管、2SC3357晶体三极管
2SC3357生产厂家：日本日电公司
2SC3357制作材料：Si-NPN
2SC3357性质：超高频/特高频（UHF）
2SC3357封装形式：直插封装
2SC3357极限工作电压：20V
2SC3357最大电流允许值：0.1A
2SC3357最大工作频率：6.5GHZ
2SC3357引脚数：3
2SC3357最大耗散功率：
2SC3357放大倍数：
2SC3357图片代号：H-100
2SC3357vtest：20
2SC3357htest：6500000000
2SC3357atest：0.1
2SC3357wtest：0

2SC3357代换 2SC3357用什么型号代替：2SC3607,

2SC3357价格

参考价格：￥3.1677

型号：2SC3357-T1-A 品牌：CEL 备注：这里有2SC3357多少钱，2026年最近7天走势，今日出价，今日竞价，2SC3357批发/采购报价，2SC3357行情走势销售排行榜，2SC3357报价。

型号	功能描述	生产厂家企业	LOGO
2SC3357	丝印代码：RE；NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N	NEC 瑞萨	NEC
2SC3357	丝印代码：RE；NPN Silicon RF Transistor Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz	KEXIN 科信电子	KEXIN
2SC3357	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS • Designed for low noise amplifier at VHF, UHF and CATV band.	ISC 无锡固电	ISC
2SC3357	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot	YFWDIODE 佑风微	YFWDIODE
2SC3357	丝印代码：RE；NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×	RENESAS 瑞萨	RENESAS
2SC3357	NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357	Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low noise and high gain, large PC in small package. Applications low noise amplifier at VHF, UHF and CATV band applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3357	SOT-89-3L Plastic-Encapsulate Transistors Features Low noise and high gain High power gain Large Ptot Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	DGNJDZ 南晶电子	DGNJDZ
2SC3357	NPN Bipolar Transistor	XHWD	XHWD
2SC3357	RF Tranasitor	UTC 友顺	UTC
2SC3357	NPN小信号三极管	CHINABASE 创基电子	CHINABASE
2SC3357A	丝印代码：RH；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357B	丝印代码：RF；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357C	丝印代码：RE；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357D	丝印代码：RE；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357E	丝印代码：RE；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SC3357-E	丝印代码：RE；NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot	YFWDIODE 佑风微	YFWDIODE
2SC3357-E-HF	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	KEXIN 科信电子	KEXIN
2SC3357-F	丝印代码：RF；NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot	YFWDIODE 佑风微	YFWDIODE
2SC3357-F-HF	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	KEXIN 科信电子	KEXIN
2SC3357-HF	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	KEXIN 科信电子	KEXIN
2SC3357-H-HF	NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	KEXIN 科信电子	KEXIN
2SC3357-T1	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×	RENESAS 瑞萨	RENESAS
2SC3357-T2	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N	NEC 瑞萨	NEC
2SC3357_15	NPN EPITAXIAL SILICON RF TRANSISTOR 文件：218.19 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SC3357-A	RF & Microwave device 文件：137.58 Kbytes Page：2 Pages	RENESAS 瑞萨	RENESAS
2SC3357-A	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：216.06 Kbytes Page：6 Pages	CEL	CEL
2SC3357-T1-A	封装/外壳：TO-243AA 包装：托盘描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL
2SC3357-T1-A	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：216.06 Kbytes Page：6 Pages	CEL	CEL
2SC3357-T1-RF-A	封装/外壳：TO-243AA 包装：带描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL
L2SC3357	丝印代码：RF；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 文件：309.96 Kbytes Page：2 Pages	LRC 乐山无线电	LRC

2SC3357产品属性

类型
描述
ptot(W)：
1.2
IC(A)：
0.1
Vcbo(V)：
20
Vceo(V)：
12
Vebo(V)：
3
Icbo(uA)：
1
Icbo(V)：
10
Vce(sat)(V)：
10
Vce(sat)Ic(mA)：
20
hFE：
50-300
hFEvce(v)：
10
hFEIc(mA)：
20
ftVce(v)：
10
ftIc/Ie(mA)：
7
PackageOutline：
SOT-89
Arrays：
BCE

2SC3357供应商更多...

更新时间：2026-5-14 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SC3357-T1	Renesas(瑞萨)	24+	标准封装	10097	支持大陆交货,美金交易。原装现货库存。	询价
上海意淼电子科技有限公司	2SC3357	NEC	23+	SOT89	3500	全新原装假一赔十	询价
深圳市昂芯微科技有限公司	2SC3357	NEC	23+	SOT89	5628	原厂原装	询价
中天科工半导体（深圳）有限公司	2SC3357-T1-A	RENESAS/瑞萨	25+	SOT89	44705	RENESAS/瑞萨全新特价2SC3357-T1-A即刻询购立享优惠#长期有货	询价
深圳市富利微电子科技有限公司	2SC3357-T1	RENESAS/瑞萨	25+	SOT89	33500	全新进口原装现货,假一罚十	询价
深圳市中飞凌科技有限公司	2SC3357-T1-ARF	RENESAS	26+	SOT89	360000	进口原装现货	询价
深圳诚思涵科技有限公司	2SC3357	RENESAS	17+	SOT-89	60000	保证进口原装可开17%增值税发票	询价
深圳市振宏微科技有限公司	2SC3357	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市粤骏腾电子科技有限公司	2SC3357	NEC	24+	SOT-89	235	现货供应	询价
千层芯半导体(深圳)有限公司	2SC3357	NEC	24+	SOT89	18700		询价

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2SC3357晶体管资料

2SC3357价格

2SC3357产品属性

2SC3357供应商更多...

2SC3357芯片相关品牌

2SC3357规格书下载地址

2SC3357参数引脚图相关

2SC3357数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC3998中文资料

2SC2859中文资料

DdatasheetPDF页码索引