2SC3357晶体管资料

  • 2SC3357别名:2SC3357三极管、2SC3357晶体管、2SC3357晶体三极管

  • 2SC3357生产厂家:日本日电公司

  • 2SC3357制作材料:Si-NPN

  • 2SC3357性质:超高频/特高频 (UHF)

  • 2SC3357封装形式:直插封装

  • 2SC3357极限工作电压:20V

  • 2SC3357最大电流允许值:0.1A

  • 2SC3357最大工作频率:6.5GHZ

  • 2SC3357引脚数:3

  • 2SC3357最大耗散功率

  • 2SC3357放大倍数

  • 2SC3357图片代号:H-100

  • 2SC3357vtest:20

  • 2SC3357htest:6500000000

  • 2SC3357atest:.1

  • 2SC3357wtest:0

  • 2SC3357代换 2SC3357用什么型号代替:2SC3607,

2SC3357价格

参考价格:¥3.1677

型号:2SC3357-T1-A 品牌:CEL 备注:这里有2SC3357多少钱,2024年最近7天走势,今日出价,今日竞价,2SC3357批发/采购报价,2SC3357行情走势销售排行榜,2SC3357报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC3357

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC3357

NPNSiliconRFTransistor

Features ●LowNoiseandHighGain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1.0GHz ●Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC3357

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP. @VCE=10V,IC=7mA,f=1.0GHz NF=1.8dBTYP.,Ga=9.0dBTYP. @VCE=10V,IC=40mA,f=1.0GHz APPLICATIONS •DesignedforlownoiseamplifieratVHF,UHFandCATVband.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3357

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC3357

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD

FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2×

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC3357

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SC3357

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features Lownoiseandhighgain,largePCinsmallpackage. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC3357

SOT-89-3LPlastic-EncapsulateTransistors

Features Lownoiseandhighgain Highpowergain LargePtot Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis10dB@VCE=10V,IC=20mA,f=1GHz Lownoise:NFTYP.Valueis1.7dB@VCE=10V,IC=7mA,f=1GHz fT(TYP.):TYP.Valueis6.5GHz@VCE=10V,IC=20mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNTransistors

■Features ●Lownoiseandhighgain ●Highpowergain ●LargePtot ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesaPb−FreeLeadFinish

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD

FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2×

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SC3357isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband.Ithaslargedynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=8.0dBTYP.@VCE=10V,IC=7mA,f=1.0GHz N

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNEPITAXIALSILICONRFTRANSISTOR

文件:218.19 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

文件:216.06 Kbytes Page:6 Pages

CEL

California Eastern Laboratories

CEL

RF&Microwavedevice

文件:137.58 Kbytes Page:2 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

文件:216.06 Kbytes Page:6 Pages

CEL

California Eastern Laboratories

CEL

封装/外壳:TO-243AA 包装:托盘 描述:RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

封装/外壳:TO-243AA 包装:带 描述:RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Laboratories

CEL

2SC3357产品属性

  • 类型

    描述

  • 型号

    2SC3357

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

更新时间:2024-4-25 21:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ
21+
SOT-89
8888888
全新原装现货价格优惠可开票
TECH PUBLIC(台舟)
24+
SOT-89-3
5000
诚信服务,绝对原装原盘。
NEC
2017+
SOT89
18700
TECHPUBLIC/台舟
23+
SOT-89-3
15800
新到现货,只有原装
21+
TO-3PL
5500
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
23+
SOT-89
9000
全新原装
瑞萨
1950+
SOT-89
9852
只做原装正品现货!或订货假一赔十!
NEC
21+
SOT-89
7453
原装现货假一赔十
RENESAS
1436+
SOT-89
30000
绝对原装进口现货可开增值税发票
NEC
20+/21+
SOT89/
9500
全新原装进口现货

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