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2SC3357晶体管资料
2SC3357别名：2SC3357三极管、2SC3357晶体管、2SC3357晶体三极管
2SC3357生产厂家：日本日电公司
2SC3357制作材料：Si-NPN
2SC3357性质：超高频/特高频 （UHF）
2SC3357封装形式：直插封装
2SC3357极限工作电压：20V
2SC3357最大电流允许值：0.1A
2SC3357最大工作频率：6.5GHZ
2SC3357引脚数：3
2SC3357最大耗散功率：
2SC3357放大倍数：
2SC3357图片代号：H-100
2SC3357vtest：20
2SC3357htest：6500000000
- 2SC3357atest：0.1
2SC3357wtest：0
2SC3357代换 2SC3357用什么型号代替：2SC3607,
2SC3357价格
参考价格：￥3.1677
型号：2SC3357-T1-A 品牌：CEL 备注：这里有2SC3357多少钱，2025年最近7天走势，今日出价，今日竞价，2SC3357批发/采购报价，2SC3357行情走势销售排行榜，2SC3357报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3357 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N | NEC 瑞萨 |   | |
2SC3357 | NPN Silicon RF Transistor Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz | KEXIN 科信电子 | | |
2SC3357 | isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS • Designed for low noise amplifier at VHF, UHF and CATV band. | ISC 无锡固电 | | |
2SC3357 | NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot | YFWDIODE 佑风微电子 | | |
2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × | RENESAS 瑞萨 | | |
2SC3357 | NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2SC3357 | Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low noise and high gain, large PC in small package. Applications low noise amplifier at VHF, UHF and CATV band applications. | FOSHAN 蓝箭电子 | | |
2SC3357 | SOT-89-3L Plastic-Encapsulate Transistors Features Low noise and high gain High power gain Large Ptot Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | DGNJDZ 南晶电子 | | |
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot | YFWDIODE 佑风微电子 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot | YFWDIODE 佑风微电子 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
NPN Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × | RENESAS 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR 文件：218.19 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：216.06 Kbytes Page：6 Pages | CEL California Eastern Labs | | ||
RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：216.06 Kbytes Page：6 Pages | CEL California Eastern Labs | | ||
封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | | ||
封装/外壳：TO-243AA 包装：带 描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL California Eastern Labs | |
2SC3357产品属性
- 类型
描述
- 型号
2SC3357
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOT89 |
44705 |
RENESAS/瑞萨全新特价2SC3357-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
03+ |
SOT89 |
144 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
FC |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
RENESAS |
24+ |
SOT89 |
12000 |
进口原装 价格优势 |
|||
瑞萨 |
1950+ |
SOT-89 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS/瑞萨 |
24+ |
SOT89 |
33500 |
全新进口原装现货,假一罚十 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
2024 |
SOT-89 |
505348 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
NEC |
23+ |
SOT89 |
2644 |
原厂原装正品 |
2SC3357规格书下载地址
2SC3357参数引脚图相关
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2SC3357数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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