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位置：首页 > IC中文资料第5520页 > 2SC3357

2SC3357晶体管资料

  • 2SC3357别名：2SC3357三极管、2SC3357晶体管、2SC3357晶体三极管

  • 2SC3357生产厂家：日本日电公司

  • 2SC3357制作材料：Si-NPN

  • 2SC3357性质：超高频/特高频 （UHF）

  • 2SC3357封装形式：直插封装

  • 2SC3357极限工作电压：20V

  • 2SC3357最大电流允许值：0.1A

  • 2SC3357最大工作频率：6.5GHZ

  • 2SC3357引脚数：3

  • 2SC3357最大耗散功率：

  • 2SC3357放大倍数：

  • 2SC3357图片代号：H-100

  • 2SC3357vtest：20

  • 2SC3357htest：6500000000

  • 2SC3357atest：0.1

  • 2SC3357wtest：0

  • 2SC3357代换 2SC3357用什么型号代替：2SC3607,

2SC3357价格

参考价格：￥3.1677

型号：2SC3357-T1-A 品牌：CEL 备注：这里有2SC3357多少钱，2025年最近7天走势，今日出价，今日竞价，2SC3357批发/采购报价，2SC3357行情走势销售排行榜，2SC3357报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SC3357

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N

NEC

瑞萨

2SC3357

NPN Silicon RF Transistor

Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

KEXIN

科信电子

2SC3357

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS • Designed for low noise amplifier at VHF, UHF and CATV band.

ISC

无锡固电

2SC3357

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot

YFWDIODE

佑风微

2SC3357

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

RENESAS

瑞萨

2SC3357

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low noise and high gain, large PC in small package. Applications low noise amplifier at VHF, UHF and CATV band applications.

FOSHAN

蓝箭电子

2SC3357

SOT-89-3L Plastic-Encapsulate Transistors

Features Low noise and high gain High power gain Large Ptot Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

DGNJDZ

南晶电子

2SC3357

NPN Bipolar Transistor

ETC

知名厂家

2SC3357

RF Tranasitor

UTC

友顺

2SC3357

NPN小信号三极管

CHINABASE

创基电子

2SC3357A

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357B

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357C

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357D

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357E

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SC3357-E

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot

YFWDIODE

佑风微

2SC3357-E-HF

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

2SC3357-F

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot

YFWDIODE

佑风微

2SC3357-F-HF

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

2SC3357-HF

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

2SC3357-H-HF

NPN Transistors

■ Features ● Low noise and high gain ● High power gain ● Large Ptot ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

2SC3357-T1

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

RENESAS

瑞萨

2SC3357-T2

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N

NEC

瑞萨

2SC3357_15

NPN EPITAXIAL SILICON RF TRANSISTOR

文件：218.19 Kbytes Page：10 Pages

RENESAS

瑞萨

2SC3357-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

文件：216.06 Kbytes Page：6 Pages

CEL

2SC3357-A

RF & Microwave device

文件：137.58 Kbytes Page：2 Pages

RENESAS

瑞萨

2SC3357-T1-A

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

文件：216.06 Kbytes Page：6 Pages

CEL

2SC3357-T1-A

封装/外壳：TO-243AA 包装：托盘 描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

2SC3357-T1-RF-A

封装/外壳：TO-243AA 包装：带 描述：RF TRANS NPN 12V 6.5GHZ SOT89 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

2SC3357产品属性

  • 类型

    描述

  • 型号

    2SC3357

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

2SC3357供应商更多...

更新时间：2025-9-28 17:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富芯乐电子科技有限公司
2SC3357-T1/RE
原装NEC
24+
SOT-89
6500
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市昂芯微科技有限公司
2SC3357
NEC
23+
SOT89
5628
原厂原装
询价
千层芯半导体(深圳)有限公司
2SC3357T1-ARE
NEC
24+
SOT89
4800
只做原装
询价
上海凌岳电子科技有限公司（上海涵恩科技）
2SC3357-T1
NEC
2023+
3/SOT89
3000
进口原装现货
询价
上海磐岳电子有限公司
2SC3357-RF
NEC
2023+
SOT89
58000
进口原装,现货热卖
询价
深圳市凌旭科技有限公司
2SC3357-T1
RENESAS
2016+
SOT89
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市昌和盛利电子有限公司
2SC3357-RF
NEC
23+
SOT-89
9896
询价
深圳市星佑电子有限公司
2SC3357-T1-A
RENESAS
12+10+
SOT-89 RF
74280
射频晶体管 找原厂原装进口货选星佑电子就对了
询价
中天科工半导体（深圳）有限公司
2SC3357-T1-A
RENESAS/瑞萨
25+
SOT89
44705
RENESAS/瑞萨全新特价2SC3357-T1-A即刻询购立享优惠#长期有货
询价
深圳市威雅利发展有限公司
2SC3357-T2
NEC原装
95+;01+
SOT-89
1794
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

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2SC3357规格书下载地址

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