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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3355-T | NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF | RENESAS 瑞萨 |   | |
2SC3355-T | NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：293.26 Kbytes Page：10 Pages | RENESAS 瑞萨 | | |
HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes Page：2 Pages | UTC 友顺 | | ||
isc Silicon NPN RF Transistor DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS • Designe | ISC 无锡固电 | | ||
Silicon NPN transistor in a TO-92 Plastic Package Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications. | FOSHAN 蓝箭电子 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz | NEC 瑞萨 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain | UTC 友顺 | | ||
HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes Page：2 Pages | UTC 友顺 | |
2SC3355-T产品属性
- 类型
描述
- 型号
2SC3355-T
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
26+ |
SOT-323 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
2SC3356 |
25+ |
8460 |
8460 |
||||
NEC |
24+ |
TO-92 |
60000 |
全新原装现货 |
|||
国产NEC |
24+ |
SOT-23 |
3000 |
原装现货假一罚十 |
|||
NEC |
23+ |
SOD-23 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC原装 |
2026+ |
SMD4 |
65428 |
百分百原装现货 实单必成 |
|||
NEC |
22+ |
SOT23 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
SOT-23 |
100000 |
现货库存 |
||||
NK/南科功率 |
23+ |
SOT-23 |
315000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SC3355-T芯片相关品牌
2SC3355-T规格书下载地址
2SC3355-T参数引脚图相关
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2SC3355-T数据表相关新闻
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2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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只做原装假一赔十
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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