2N65晶体管资料

  • 2N65别名:2N65三极管、2N65晶体管、2N65晶体三极管

  • 2N65生产厂家:CSR_美国电子晶体管公司

  • 2N65制作材料:Ge-PNP

  • 2N65性质:低频或音频放大 (LF)

  • 2N65封装形式:直插封装

  • 2N65极限工作电压:25V

  • 2N65最大电流允许值:0.02A

  • 2N65最大工作频率:<1MHZ或未知

  • 2N65引脚数:3

  • 2N65最大耗散功率:0.1W

  • 2N65放大倍数

  • 2N65图片代号:D-161

  • 2N65vtest:25

  • 2N65htest:999900

  • 2N65atest:0.02

  • 2N65wtest:0.1

  • 2N65代换 2N65用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51A,

2N65价格

参考价格:¥7.1854

型号:2N6504 品牌:ON 备注:这里有2N65多少钱,2025年最近7天走势,今日出价,今日竞价,2N65批发/采购报价,2N65行情走势销售排行榜,2N65报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N65

N-CHANNELMOSFET

DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
2N65

650VN-ChannelPlanarMOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
2N65

650VN-ChannelPlanarMOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
2N65

650VN-ChannelPlanarMOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
2N65

N-channelpowerMOStube

文件:2.07602 Mbytes Page:11 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
2N65

2A650VN-channelEnhancementModePowerMOSFET

文件:1.36437 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N65

2A650VN-channelEnhancementModePowerMOSFET

文件:1.35946 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N65

2A650VN-channelEnhancementModePowerMOSFET

文件:1.35916 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N65

2A650VN-channelEnhancementModePowerMOSFET

文件:1.35898 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N65

2A650VN-channelEnhancementModePowerMOSFET

文件:1.35991 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
2N65

N-Channel650V(D-S)MOSFET

文件:1.08591 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
2N65

DrainCurrentID=2A@TC=25C

文件:136.58 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2N65

650VN-ChannelPowerMOSFET

文件:2.67418 Mbytes Page:9 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
2N65

N-CHANNELPOWERMOSFET

文件:2.48618 Mbytes Page:8 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
2N65

2A,650VN-CHANNELPOWERMOSFET

文件:195.58 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N65

2Amps,650VoltsN-CHANNELMOSFET

文件:201.07 Kbytes Page:2 Pages

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
2N65

2Amps,650VoltsN-CHANNELPOWERMOSFET

文件:185.87 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

GERMANIUMPNPSMALLSIGNALTRANSISTORS

GERMANIUMPNPSMALLSIGNALTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

GERMABIUMPNPMESATRANSISTORS

GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPSMALLSIGNALTRANSISTORS

AMMSEMIAmerican Microsemiconductor

美国微半导体有限公司

AMMSEMI

alloy-junctiongermaniumtransistors

[INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=90V(Min) •WideAreaofSafeOperation APPLICATIONS •Designedforuseinhigh-current,high-speedswitchingcircuitssuchas:low-distortionpoweramplifiers,oscillators,switchingregulators,seriesregulators,converters,andi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-66package •Wideareaofoperation •Highsustainingvoltage APPLICATIONS •Forhigh-speedswitchingandlinearamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

HIGHSPEEDEPITAXIALCOLLECTORSILICONNPNPLANARTRANSISTORS

High-SpeedEpitaxial-CollectorSiliconN-P-NPlanarTransistors ForHigh-SpeedSwitchingandLinear-AmplifierApplications

GESS

GE Solid State

GESS

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-66package •Wideareaofoperation •Highsustainingvoltage APPLICATIONS •Forhigh-speedswitchingandlinearamplifierapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

DualTransistors

DualTransistors TO-78Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

alloy-junctiongermaniumtransistors

[INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

alloy-junctiongermaniumtransistors

[INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

GERMABIUMPNPMESATRANSISTORS

GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPSMALLSIGNALTRANSISTORS

AMMSEMIAmerican Microsemiconductor

美国微半导体有限公司

AMMSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Highbreakdownvoltage ·Lowcollectorsaturationvoltage APPLICATIONS ·Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=250V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=350V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SINPNPOWERBJT

Description:SiNPNPowerBJT,I(C)=5Ato9.9A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=5A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

HighVoltageTransistors

HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HighVoltageTransistor625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

COMPLEMENTARYSILICONHIGHVOLTAGETRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6515,2N6518 seriesdevicesarecomplementarysilicontransistors designedforhighvoltagedriverandamplifier applications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSILICONPLANAREPITAXIALTRANSISTORS

NPNSILICONPLANAREPITAXIALTRANSISTORS HIGHVOLTAGETRANSISTORS

CDIL

Continental Device India Limited

CDIL

HighVoltageTransistor

HighVoltageTransistor •Collector-EmitterVoltage:VCEO=250V •CollectorDissipation:Pc(max)=625mW •Complementto2N6518

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONHIGHVOLTAGETRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6515,2N6518 seriesdevicesarecomplementarysilicontransistors designedforhighvoltagedriverandamplifier applications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPNSILICONPLANAREPITAXIALTRANSISTORS

NPNSILICONPLANAREPITAXIALTRANSISTORS HIGHVOLTAGETRANSISTORS

CDIL

Continental Device India Limited

CDIL

NPNEPITAXIALSILICONTRANSISTOR

HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=300V •CollectorDissipation:PC(max)=625mW

SamsungSamsung semiconductor

三星三星半导体

Samsung

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *350VoltVCEO *Gainof15atIC=100mA

Zetex

Zetex Semiconductors

Zetex

NPNEPITAXIALSILICONTRANSISTOR

HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=350V •CollectorDissipation:Pc(max)=625mW

SamsungSamsung semiconductor

三星三星半导体

Samsung

NPNEpitaxialSiliconTransistor

Features •HighVoltageTransistor •CollectorDissipation:PC(max)=625mW •Complementto2N6520 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

HighVoltageTransistors

HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HighVoltageTransistor625mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNPlasticEncapsulatedTransistor

FEATURES HighVoltageTransistors Complementofthe2N6520

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:625mW(Tamb=25℃) Collectorcurrent ICM:500mA Collector-basevoltage V(BR)CBO:350V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

TO-92Plastic-EncapsulateTransistors

Features Complementto2N6520

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforapplicationsrequiringhighbreakdownvoltage.

DCCOM

Dc Components

DCCOM

2N65产品属性

  • 类型

    描述

  • 型号

    2N65

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    2A, 650V N-CHANNEL POWER MOSFET

更新时间:2025-6-27 11:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
友顺 UTC
21+
TO-251
4000
原装正品,实单请联系
VIC
23+
TO252
15000
全新原装现货,价格优势
24+
NA/
91480
优势代理渠道,原装正品,可全系列订货开增值税票
GESS
23+
NA
39960
只做进口原装,终端工厂免费送样
onsemi(安森美)
24+
-
907
原厂订货渠道,支持BOM配单一站式服务
GT
24+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
CJ/长电
23+
TO-220F
248000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
22+
TO-252251
20000
深圳原装现货正品有单价格可谈
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
ON
07+
TO-220
14
公司原装现货

2N65芯片相关品牌

  • ABLIC
  • AMD
  • COILCRAFT
  • Good-Ark
  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

2N65数据表相关新闻