丝印代码：2N65；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

丝印代码：2N65；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

丝印代码：2N65；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

丝印代码：2N65；2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.36437 Mbytes Page：12 Pages

丝印代码：2N65；2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35946 Mbytes Page：12 Pages

丝印代码：2N65；2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35916 Mbytes Page：12 Pages

丝印代码：2N65；2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35898 Mbytes Page：12 Pages

丝印代码：2N65；2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35991 Mbytes Page：12 Pages

丝印代码：2N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

丝印代码：2N65；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

N-CHANNEL MOSFET

DESCRIPTION 2N60 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

650V N-Channel Planar MOSFET

2A, 650V   N-CHANNEL   POWER MOSFET

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies • RDS(ON) = 5.5Ω @ VGS = 10V \n• Ultra Low gate charge (typical 9.0nC) \n• Low reverse transfer capacitance (CRSS = typical 5.0 pF) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

N-channel power MOS tube

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N-Channel 650 V (D-S) MOSFET

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650V N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

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Drain Current ID= 2A@ TC=25C

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2A mps,650 Volts N-CHANNEL MOSFET

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2A, 650V N-CHANNEL POWER MOSFET

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2 Amps, 650 Volts N-CHANNEL POWER MOSFET

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丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

丝印代码：2N6520；TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

丝印代码：2N6520；PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO = -350 V • Collector Dissipation: PC (max) = 625 mW • Complement to 2N6517

丝印代码：2N6520；TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

丝印代码：2N65AT；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

丝印代码：2N65AF；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

丝印代码：2N65AS；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

丝印代码：2N65AS；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

丝印代码：2N65AMJ；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

丝印代码：2N65AD；2A 650V N-channel enhanced field effect transistor

文件：998.45 Kbytes Page：7 Pages

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

GERMANIUM PNPSMALL SIGNAL TRANSISTORS

GERMANIUM PNP SMALL SIGNAL TRANSISTORS

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

High-Speed Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and i

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linearamplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linear amplifier applications

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and de

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 5A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

High Voltage Transistor

High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: Pc (max)=625mW • Complement to 2N6518

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.