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2N65晶体管资料
2N65别名:2N65三极管、2N65晶体管、2N65晶体三极管
2N65生产厂家:CSR_美国电子晶体管公司
2N65制作材料:Ge-PNP
2N65性质:低频或音频放大 (LF)
2N65封装形式:直插封装
2N65极限工作电压:25V
2N65最大电流允许值:0.02A
2N65最大工作频率:<1MHZ或未知
2N65引脚数:3
2N65最大耗散功率:0.1W
2N65放大倍数:
2N65图片代号:D-161
2N65vtest:25
2N65htest:999900
- 2N65atest:0.02
2N65wtest:0.1
2N65代换 2N65用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX51A,
2N65价格
参考价格:¥7.1854
型号:2N6504 品牌:ON 备注:这里有2N65多少钱,2025年最近7天走势,今日出价,今日竞价,2N65批发/采购报价,2N65行情走势销售排行榜,2N65报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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2N65 | N-CHANNELMOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
2N65 | N-Channel650V(D-S)MOSFET 文件:1.08591 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
2N65 | DrainCurrentID=2A@TC=25C 文件:136.58 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2N65 | 650VN-ChannelPowerMOSFET 文件:2.67418 Mbytes Page:9 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
2N65 | N-CHANNELPOWERMOSFET 文件:2.48618 Mbytes Page:8 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
2N65 | 2A,650VN-CHANNELPOWERMOSFET 文件:195.58 Kbytes Page:6 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2N65 | 2Amps,650VoltsN-CHANNELMOSFET 文件:201.07 Kbytes Page:2 Pages | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | ||
2N65 | 2Amps,650VoltsN-CHANNELPOWERMOSFET 文件:185.87 Kbytes Page:6 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2N65 | 2A650VN-channelEnhancementModePowerMOSFET 文件:1.36437 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | ||
2N65 | 2A650VN-channelEnhancementModePowerMOSFET 文件:1.35946 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | ||
2N65 | 2A650VN-channelEnhancementModePowerMOSFET 文件:1.35916 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | ||
2N65 | 2A650VN-channelEnhancementModePowerMOSFET 文件:1.35898 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | ||
2N65 | 2A650VN-channelEnhancementModePowerMOSFET 文件:1.35991 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | ||
2N65 | N-channelpowerMOStube 文件:2.07602 Mbytes Page:11 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
GERMANIUMPNPSMALLSIGNALTRANSISTORS GERMANIUMPNPSMALLSIGNALTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPSMALLSIGNALTRANSISTORS | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 | |||
alloy-junctiongermaniumtransistors [INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=90V(Min) •WideAreaofSafeOperation APPLICATIONS •Designedforuseinhigh-current,high-speedswitchingcircuitssuchas:low-distortionpoweramplifiers,oscillators,switchingregulators,seriesregulators,converters,andi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •Wideareaofoperation •Highsustainingvoltage APPLICATIONS •Forhigh-speedswitchingandlinearamplifierapplications | SAVANTIC Savantic, Inc. | |||
HIGHSPEEDEPITAXIALCOLLECTORSILICONNPNPLANARTRANSISTORS High-SpeedEpitaxial-CollectorSiliconN-P-NPlanarTransistors ForHigh-SpeedSwitchingandLinear-AmplifierApplications | GESS GE Solid State | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-66package •Wideareaofoperation •Highsustainingvoltage APPLICATIONS •Forhigh-speedswitchingandlinearamplifierapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
DualTransistors DualTransistors TO-78Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
SiliconControlledRectifiers SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiers SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiers SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiers SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconControlledRectifiers SiliconControlledRectifiersReverseBlockingThyristors Designedprimarilyforhalf‐waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. Features •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStabil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
alloy-junctiongermaniumtransistors [INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
alloy-junctiongermaniumtransistors [INTEX/SEMITRONICSCORP] alloy-junctiongermaniumtransistors | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPMESATRANSISTORS GERMABIUMPNPSMALLSIGNALTRANSISTORS | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highbreakdownvoltage ·Lowcollectorsaturationvoltage APPLICATIONS ·Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=250V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=4A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=350V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SINPNPOWERBJT Description:SiNPNPowerBJT,I(C)=5Ato9.9A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=1.5V(Max.)@IC=5A •Colletor-EmitterSustainingVoltage-:VCEO(SUS)=300V(Min.) •FastSwitchingSpeed APPLICATIONS •Designedforuseinoff-linepowersupplies,highvoltageinverters,switchingregulators,ignitionsystemsandd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highbreakdownvoltage •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinswitchingpowersupplyapplicationsandotherinductiveswitchingcircuits | SAVANTIC Savantic, Inc. | |||
HighVoltageTransistors HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HighVoltageTransistor625mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
COMPLEMENTARYSILICONHIGHVOLTAGETRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6515,2N6518 seriesdevicesarecomplementarysilicontransistors designedforhighvoltagedriverandamplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSILICONPLANAREPITAXIALTRANSISTORS NPNSILICONPLANAREPITAXIALTRANSISTORS HIGHVOLTAGETRANSISTORS | CDIL Continental Device India Limited | |||
HighVoltageTransistor HighVoltageTransistor •Collector-EmitterVoltage:VCEO=250V •CollectorDissipation:Pc(max)=625mW •Complementto2N6518 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONHIGHVOLTAGETRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6515,2N6518 seriesdevicesarecomplementarysilicontransistors designedforhighvoltagedriverandamplifier applications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPNSILICONPLANAREPITAXIALTRANSISTORS NPNSILICONPLANAREPITAXIALTRANSISTORS HIGHVOLTAGETRANSISTORS | CDIL Continental Device India Limited | |||
NPNEPITAXIALSILICONTRANSISTOR HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=300V •CollectorDissipation:PC(max)=625mW | SamsungSamsung semiconductor 三星三星半导体 | |||
NPNSILICONPLANARMEDIUMPOWERTRANSISTOR FEATURES *350VoltVCEO *Gainof15atIC=100mA | Zetex Zetex Semiconductors | |||
NPNEPITAXIALSILICONTRANSISTOR HIGHVOLTAGETRANSISTOR •Collector-EmitterVoltage:VCEO=350V •CollectorDissipation:Pc(max)=625mW | SamsungSamsung semiconductor 三星三星半导体 | |||
NPNEpitaxialSiliconTransistor Features •HighVoltageTransistor •CollectorDissipation:PC(max)=625mW •Complementto2N6520 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HighVoltageTransistors HighVoltageTransistors NPNandPNP Features •VoltageandCurrentareNegativeforPNPTransistors •Pb−FreePackageisAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HighVoltageTransistor625mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •ThroughHolePackage •150°CJunctionTemperature •VoltageandCurrentarenegativeforPNPtrans | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNPlasticEncapsulatedTransistor FEATURES HighVoltageTransistors Complementofthe2N6520 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:625mW(Tamb=25℃) Collectorcurrent ICM:500mA Collector-basevoltage V(BR)CBO:350V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
TO-92Plastic-EncapsulateTransistors Features Complementto2N6520 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforapplicationsrequiringhighbreakdownvoltage. | DCCOM Dc Components | |||
NPNEPITAXIALPLANARTRANSISTOR Description The2N6517isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •HighCollector-EmitterBreakdownVoltage. •LowCollector-EmitterSaturationVoltage. •The2N6517iscomplementaryto2N6520. | TGS Tiger Electronic Co.,Ltd | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Complementto2N6520 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:625mW(Tamb=25℃) Collectorcurrent ICM:500mA Collector-basevoltage V(BR)CBO:350V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |
2N65产品属性
- 类型
描述
- 型号
2N65
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
2A, 650V N-CHANNEL POWER MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
- |
907 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
24+ |
NA/ |
91480 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
GT |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD |
2430+ |
TO92 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
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东光微 |
25+23+ |
220F |
16685 |
绝对原装正品全新进口深圳现货 |
|||
UMW(广东友台半导体) |
24+ |
SOT-223 |
5000 |
诚信服务,绝对原装原盘。 |
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ON/安森美 |
24+ |
TO-92 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON |
07+ |
TO-220 |
14 |
公司原装现货 |
|||
2015+ |
1000 |
公司现货库存 |
2N65规格书下载地址
2N65参数引脚图相关
- 5000
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- 485接口
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- 3q1
- 3g汽车
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- 2sc4226
- 2N6517
- 2N6516
- 2N6515
- 2N6514
- 2N6513
- 2N6512
- 2N6511
- 2N6510
- 2N651(A)
- 2N651
- 2N650A
- 2N6509T
- 2N6509G
- 2N6509
- 2N6508G
- 2N6508
- 2N6507T
- 2N6507G
- 2N6507
- 2N6506
- 2N6505T
- 2N6505G
- 2N6505
- 2N6504G
- 2N6504
- 2N6503
- 2N6502
- 2N6501
- 2N6500
- 2N650(A)
- 2N650
- 2N65_11
- 2N6499
- 2N6498
- 2N6497
- 2N6496
- 2N6495
- 2N6494
- 2N6493
- 2N6492
- 2N6491G
- 2N6491
- 2N6490G
- 2N6490
- 2N649(/5)
- 2N649(/22)
- 2N649
- 2N6489
- 2N6488G
- 2N6488
- 2N6487G
- 2N6487
- 2N6486
- 2N6485
- 2N6482
- 2N6481
- 2N6480
2N65数据表相关新闻
2N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N7002 MOSFET N-CHANNEL
2N7002MOSFETN-CHANNEL60V115mA
2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
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