650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

N-CHANNEL MOSFET

DESCRIPTION 2N60 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

N-Channel 650 V (D-S) MOSFET

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Drain Current ID= 2A@ TC=25C

文件：136.58 Kbytes Page：2 Pages

650V N-Channel Power MOSFET

文件：2.67418 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：2.48618 Mbytes Page：8 Pages

2A, 650V N-CHANNEL POWER MOSFET

文件：195.58 Kbytes Page：6 Pages

2A mps,650 Volts N-CHANNEL MOSFET

文件：201.07 Kbytes Page：2 Pages

2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.36437 Mbytes Page：12 Pages

2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35946 Mbytes Page：12 Pages

2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35916 Mbytes Page：12 Pages

2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35898 Mbytes Page：12 Pages

2A 650V N-channel Enhancement Mode Power MOSFET

文件：1.35991 Mbytes Page：12 Pages

N-channel power MOS tube

文件：2.07602 Mbytes Page：11 Pages

2 Amps, 650 Volts N-CHANNEL POWER MOSFET

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alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

GERMANIUM PNPSMALL SIGNAL TRANSISTORS

GERMANIUM PNP SMALL SIGNAL TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linearamplifier applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and i

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linear amplifier applications

HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

High-Speed Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stabil

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and de

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 5A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

High Voltage Transistor

High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: Pc (max)=625mW • Complement to 2N6518

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 300V • Collector Dissipation: PC (max)=625mW

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complement to 2N6520

TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package Features High voltage. Applications High voltage control circuit application.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6517 is complementary to 2N6520.

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO = 350V • Collector Dissipation: Pc (max) = 625mW

NPN Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*