HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS

High-Speed Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and i

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linearamplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Wide area of operation • High sustaining voltage APPLICATIONS • For high-speed switching and linear amplifier applications

Silicon NPN Power Transistors

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Bipolar NPN Device in a Hermetically sealed TO66

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封装/外壳：TO-213AA，TO-66-2 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66

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