High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

PNP Plastic Encapsulated Transistor

FEATURES ● High voltage transistors

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2N6520 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6520 is complementary to 2N6517.

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltage. Applications High voltage control circuit application.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for applications requiring high breakdown voltage.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complement to 2N6517

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● Complement to 2N6517

TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.

中等功率双极型晶体管

晶体管

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

High Voltage Transistor 625mW

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High Voltage Transistor 625mW

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HIGH VOLTAGE TRANSISTOR

文件：109.18 Kbytes Page：3 Pages

High Voltage Transistors

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High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

TO-92 Plastic-Encapsulate PNP Transistors

FEATURES  Complement to 2N6517  High voltage. APPLICATIONS  High voltage control circuit application.

PNP Plastic Encapsulated Transistor

文件：242.86 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PNP 350V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS PNP 350V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个