丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package Features High voltage. Applications High voltage control circuit application.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Complement To 2N6520

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6517 is complementary to 2N6520.

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA

NPN Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO = 350V • Collector Dissipation: Pc (max) = 625mW

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for applications requiring high breakdown voltage.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complement to 2N6520

NPN Plastic Encapsulated Transistor

FEATURES  High Voltage Transistors  Complement of the 2N6520

High Voltage Transistor 625mW

文件：295.96 Kbytes Page：7 Pages

High Voltage Transistor 625mW

文件：341.17 Kbytes Page：7 Pages

High Voltage Transistors

文件：101.59 Kbytes Page：8 Pages

NPN Plastic Encapsulated Transistor

文件：136.37 Kbytes Page：1 Pages

小信号晶体管

中等功率双极型晶体管

晶体管

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 350V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices*

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High Collector-Emitter Voltage. Applications High voltage application.

NPN Epitaxial Silicon Transistor

文件：181.47 Kbytes Page：6 Pages

NPN Plastic Encapsulated Transistor

文件：136.37 Kbytes Page：1 Pages

NPN Epitaxial Silicon Transistor

文件：181.47 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 350V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6517 is complementary to H2N6520