PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 350V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

PNP Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans