alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

Trans GP BJT PNP 0.5A

丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

丝印代码：2N6517；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 5 A to 9.9 A

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 4A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and de

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 5A • Colletor-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) • Fast Switching Speed APPLICATIONS • Designed for use in off-line power supplies, high voltage inverters, switching regulators, ignition systems and d

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • For use in switching power supply applications and other inductive switching circuits

High Voltage Transistor

High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: Pc (max)=625mW • Complement to 2N6518

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 300V • Collector Dissipation: PC (max)=625mW

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

NPN Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO = 350V • Collector Dissipation: Pc (max) = 625mW

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complement to 2N6520

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for applications requiring high breakdown voltage.

NPN Plastic Encapsulated Transistor

FEATURES  High Voltage Transistors  Complement of the 2N6520

TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Complement To 2N6520

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6517 is complementary to 2N6520.

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package Features High voltage. Applications High voltage control circuit application.

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices*

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High Collector-Emitter Voltage. Applications High voltage application.

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR

PNP Epitaxial Silicon Transistor

High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications.

High Voltage Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Through Hole Package • 150 °C Junction Temperature • Voltage and Current are negative for PNP trans

PNP Epitaxial Silicon Transistor

High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS HIGH VOLTAGE TRANSISTORS

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

SI NPN POWER BJT

文件：95.18 Kbytes Page：1 Pages

isc Silicon NPN Power Transistor

文件：143.6 Kbytes Page：2 Pages

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：14.69 Kbytes Page：1 Pages

Silicon NPN Power Transistors

文件：111.01 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：111.01 Kbytes Page：3 Pages

Bipolar NPN Device

文件：11.29 Kbytes Page：1 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar NPN Device

文件：11.28 Kbytes Page：1 Pages