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VT30价格

参考价格：￥4.1476

型号：VT3045BP-M3/4W 品牌：Vishay 备注：这里有VT30多少钱，2026年最近7天走势，今日出价，今日竞价，VT30批发/采购报价，VT30行情走势销售排行榜，VT30报价。

型号	功能描述	生产厂家企业	LOGO
VT30	包装：散装描述：VOLTAGE DETECTOR, LCD MULTIFUNCT 测试与计量设备 - 电气检测仪、电流探头	ETC 知名厂家	ETC
VT30	包装：散装描述：VOLTAGE DETECTOR, LCD MULTIFUNCT 测试与计量设备 - 电气检测仪、电流探头	ETC 知名厂家	ETC
VT30	LCD Multifunction Voltage Tester 文件：242.75 Kbytes Page：7 Pages	EXTECH	EXTECH
VT300	Photoconductive Cells and Analog Optoisolators (Vactrols) Custom and Semi-Custom Devices Upon request, and where sufficient quantities are involved, PerkinElmer Optoelectronics will test standard parts to your unique set of specifications. The advantage of testing parts under actual operating conditions is predictable performance in the application. Pe	PERKINELMER	PERKINELMER
VT300CT	Photoconductive Cells and Analog Optoisolators (Vactrols) Custom and Semi-Custom Devices Upon request, and where sufficient quantities are involved, PerkinElmer Optoelectronics will test standard parts to your unique set of specifications. The advantage of testing parts under actual operating conditions is predictable performance in the application. Pe	PERKINELMER	PERKINELMER
VT3045BP	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045BP	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045BP_V01	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045BP-M3/4W	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045BP-M3SLASH4W	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045C_V01	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045CBP	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045CBP	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay.	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045CBP_V01	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045CBP-M3-4W	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay.	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045CHM3	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045C-M3	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060C-E3	Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060C-E3_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060CHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060C-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G_V01	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G-E3	Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G-E3_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060GHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3060G-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080C	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080C-E3	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080C-E3_V01	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080CHM3-4W	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080C-M3-4W	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S_V01	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S-E3	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S-E3	Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S-E3_V01	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080SHM3-4W	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3080S-M3-4W	Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency c	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C_V01	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C-E3	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C-E3	Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency c	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C-E3_V01	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C-E3-4W	Dual Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency c	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30L60C-M3SLASH4W	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT30_15	Digital Voltage Tester with Bargraph 文件：274.56 Kbytes Page：1 Pages	EXTECH	EXTECH
VT30-2031	RF射频同轴连接器	CINCH	CINCH
VT30-2051	RF射频同轴连接器	CINCH	CINCH
VT30-2071	RF射频同轴连接器	CINCH	CINCH
VT3045BP_15	Trench MOS Barrier Schottky Rectifier 文件：105.3 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
VT3045BP_15	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：103.13 Kbytes Page：4 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

VT30产品属性

类型
描述
测量频率：
50 - 60 Hz
测量输出电压：
110 Vac/125 Vac/230 Vac/240 Vac
测量功率：
3.000 VA
许可：
cURus
环境温度最大：
40 °C
类型：
开放式
绝缘材料级：
B
防护等级：
IP 00
防护等级（预备）：
I
防短路：
非防短路
检测电压：
2.500 Vac
固定方式：
支撑角铁
接口：
螺栓端子
宽度：
174 mm
高度：
148 mm
深度：
168 mm
重量：
19.40 kg

VT30供应商更多...

更新时间：2026-8-1 22:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	VT3060C-E3/4W	VIS	24+	TO-220	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市威雅利发展有限公司	VT3060C-M3/4W	VISHAY	10+	TO-220	86	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市旺财半导体有限公司	VT30-5FF	LAMBDA	25+	原厂封装	32500	原装正品，欢迎询价	询价
深圳市佳鑫美电子科技有限公司	VT3064HO/TM7438I		25+	BGA	2140	全新原装!现货特价供应	询价
深圳市华斯顿科技有限公司	VT3091E	VT	25+23+	na	39426	绝对原装正品全新进口深圳现货	询价
深圳市华来深电子有限公司	VT3045C-M3/4W	VISHAY	23+	TO-220	8650	受权代理!全新原装现货特价热卖!	询价
深圳市恒达亿科技有限公司	VT3089E(TMA713D)	VIA	25+	BGA-552/240P	4500	全新原装、诚信经营、公司现货销售!	询价
深圳市赛美科科技有限公司	VT301/2	ROHS		CAN3	6500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市壹芯创科技有限公司	VT3089E(TMA713D)	VIA	22+	BGA-552/240P	1000	全新原装现货!自家库存!	询价
上海鑫科润电子科技有限公司	VT3089E(TMA713D)	VIA	03+	BGA-552/240PCS	360	原装现货海量库存欢迎咨询	询价

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VXA-55-101E
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DdatasheetPDF页码索引

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找IC，尽在114IC

VT30价格

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VT30芯片相关品牌

VT30规格书下载地址

VT30参数引脚图相关

VT30数据表相关新闻

VXA-55-101E

VT1211

VXO7805-1000

VT263WFQR-ADJ十年IC，只做原装。

VUO62-16NO7

VST025N15HS

DdatasheetPDF页码索引