Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：148.99 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

整流器 30A 60V Dual High Volt TrenchMOS

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：134.04 Kbytes Page：5 Pages

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temper

ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS

ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur

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