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VT3080S价格
参考价格：￥3.5145
型号：VT3080S-E3/4W 品牌：Vishay 备注：这里有VT3080S多少钱，2026年最近7天走势，今日出价，今日竞价，VT3080S批发/采购报价，VT3080S行情走势销售排行榜，VT3080S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VT3080S | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 |   | |
VT3080S | Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | |
VT3080S | Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | |
VT3080S | Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VT3080S | Trench MOS Barrier Schottky Rectifier 文件：160.94 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：125.84 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：150.87 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：148.44 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 30A 80V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 80V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
整流器 30A,80V,TRENCH SKY RECT. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Operational Transconductance Amplifier 文件：188.12 Kbytes Page：6 Pages | NSC 国半 | | ||
Operational Transconductance Amplifier 文件：188.12 Kbytes Page：6 Pages | NSC 国半 | | ||
Operational Transconductance Amplifier 文件：188.12 Kbytes Page：6 Pages | NSC 国半 | | ||
Operational Transconductance Amplifier 文件：188.12 Kbytes Page：6 Pages | NSC 国半 | | ||
ULTRAFAST RECTIFIERS 30 AMPERES 600-800 VOLTS 文件：52.24 Kbytes Page：2 Pages | MOTOROLA 摩托罗拉 | |
VT3080S产品属性
- 类型
描述
- 型号
VT3080S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
26+ |
SOT-89 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
VIS |
22+ |
TO-220AB |
6000 |
十年配单,只做原装 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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