型号 功能描述 生产厂家 企业 LOGO 操作
VT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

VT3060G-E3

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

VISHAYVishay Siliconix

威世威世科技公司

VT3060G-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.59 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.59 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum

VISHAYVishay Siliconix

威世威世科技公司

VT3060G-E3产品属性

  • 类型

    描述

  • 型号

    VT3060G-E3

  • 制造商

    Vishay Semiconductors

  • 功能描述

    30A,60V,DUAL TRENCH SKY RECT.

更新时间:2026-1-27 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
23+
BGA
20000
全新原装假一赔十
00+
BGA
2255
全新原装进口自己库存优势
TRONSON
2450+
RJ45/SMD
9850
只做原装正品现货或订货假一赔十!
VISHAY
26+
SOT-89
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
TRONSON
2026+
SOP
15238
原厂优势渠道
25+
BGA
2140
全新原装!现货特价供应
TRONSON
2447
SOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原装现货
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
SMC
24+
原装
8000
进口原装正品现货

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