位置：首页 > IC中文资料第11188页 > VT3060G-M3-4W
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VT3060G-M3-4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 |   | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：79.42 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | |
VT3060G-M3-4W产品属性
- 类型
描述
- 型号
VT3060G-M3-4W
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TRONSON |
1736+ |
SOP |
15238 |
原厂优势渠道 |
|||
00+ |
BGA |
2255 |
全新原装进口自己库存优势 |
||||
23+ |
BGA |
20000 |
全新原装假一赔十 |
||||
TRONSON |
2450+ |
RJ45/SMD |
9850 |
只做原装正品现货或订货假一赔十! |
|||
25+ |
BGA |
2140 |
全新原装!现货特价供应 |
||||
VIA |
23+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
TRONSON |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
VIS |
25+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SMC |
24+ |
原装 |
8000 |
进口原装正品现货 |
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VT3060G-M3-4W规格书下载地址
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VT3060G-M3-4W数据表相关新闻
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DdatasheetPDF页码索引
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