Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation\n;

肖特基二极管与整流器 30A 45V DUAL TrenchMOS

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 45V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：136.04 Kbytes Page：5 Pages

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：89.96 Kbytes Page：5 Pages

Trench MOS Schottky technology

文件：88.73 Kbytes Page：4 Pages

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：136.04 Kbytes Page：5 Pages