位置：首页 > IC中文资料第11188页 > VT3060G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VT3060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 |   | |
VT3060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | |
VT3060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VT3060G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maxim | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.87 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
整流器 30A,60V,TRENCH SKY RECT. | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
WASHERS AND NUTS [KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
High-performance Optical Mouse Sensor Description The ADNS-3060 is a high performance addition to Agilent’s popular ADNS family of optical mouse sensors. The ADNS-3060 is based on a new, faster architecture with improved navigation. The sensor is capable of sensing high speed mouse motion - up to 40 inches per second and acceler | HP 安捷伦 | | ||
Pry Out Plugs 文件：117.99 Kbytes Page：1 Pages | Heyco | | ||
N-Channel Trench Power MOSFET 文件：654.41 Kbytes Page：6 Pages | FUMAN 富满微 | | ||
Optical Mouse Sensor 文件：107.52 Kbytes Page：1 Pages | AVAGO 安华高 | |
VT3060G产品属性
- 类型
描述
- 型号
VT3060G
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TRONSON |
2450+ |
RJ45/SMD |
9850 |
只做原装正品现货或订货假一赔十! |
|||
25+ |
BGA |
2140 |
全新原装!现货特价供应 |
||||
VISHAY/威世 |
23+ |
TO-220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
TRONSON |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
23+ |
BGA |
20000 |
全新原装假一赔十 |
||||
TRONSON |
1736+ |
SOP |
15238 |
原厂优势渠道 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
Vishay General Semiconductor - |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
00+ |
BGA |
2255 |
全新原装进口自己库存优势 |
VT3060G规格书下载地址
VT3060G参数引脚图相关
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