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VT30L60C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VISHAYVishay Siliconix

威世威世科技公司

VT30L60C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS   For use in high frequency c

VISHAYVishay Siliconix

威世威世科技公司

VT30L60C

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency c

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS   For use in high frequency c

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 60V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-220-3 包装:散装 描述:DIODE SCHOTTKY 60V 15A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Trench MOS Barrier Schottky Rectifier

文件:142.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Super Fast Recovery Rectifiers(600V 30A)

Single Super Fast Recovery Rectifiers(200V 10A) FEATURES ● Low noise ● trr35ns ● Fully Isolated Molding APPLICATIONS ● Switching power supply ● Free Wheel ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation

SHINDENGEN

POWER SCHOTTKY RECTIFIER

IF(AV) 2 x 15 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V Description These dual center tap Schottky rectifiers are suited for switched mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, TO-220AB narrow leads, TO-220AB, D2PAK, I2PAK and TO-247, this device

STMICROELECTRONICS

意法半导体

POWER SCHOTTKY RECTIFIER

IF(AV) 2 x 15 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V Description These dual center tap Schottky rectifiers are suited for switched mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, TO-220AB narrow leads, TO-220AB, D2PAK, I2PAK and TO-247, this device

STMICROELECTRONICS

意法半导体

POWER SCHOTTKY RECTIFIER

IF(AV) 2 x 15 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V Description These dual center tap Schottky rectifiers are suited for switched mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, TO-220AB narrow leads, TO-220AB, D2PAK, I2PAK and TO-247, this device

STMICROELECTRONICS

意法半导体

POWER SCHOTTKY RECTIFIER

IF(AV) 2 x 15 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V Description These dual center tap Schottky rectifiers are suited for switched mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, TO-220AB narrow leads, TO-220AB, D2PAK, I2PAK and TO-247, this device

STMICROELECTRONICS

意法半导体

VT30L60C产品属性

  • 类型

    描述

  • 型号

    VT30L60C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual Trench MOS Barrier Schottky Rectifier

更新时间:2026-8-2 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
NA
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Vishay
24+
NA
3000
进口原装正品优势供应
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
ROHS
CAN3
6500
一级代理 原装正品假一罚十价格优势长期供货
VISHAY/威世
25+
SMD
32360
VISHAY/威世全新特价VT30L60C-E3/4W即刻询购立享优惠#长期有货
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY
21+
标准封装
15000
进口原装,订货渠道!
VISHAY
17+
TO220
15000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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