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STP26NM60ND价格
参考价格：￥18.9926
型号：STP26NM60ND 品牌：STMicroelectronics 备注：这里有STP26NM60ND多少钱，2025年最近7天走势，今日出价，今日竞价，STP26NM60ND批发/采购报价，STP26NM60ND行情走势销售排行榜，STP26NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP26NM60ND | Low input capacitance and gate charge Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICS 意法半导体 |   | |
STP26NM60ND | isc N-Channel MOSFET Transistor 文件：320.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=20A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera | ISC 无锡固电 | | ||
N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=21A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera | ISC 无锡固电 | | ||
Low input capacitance and gate charge Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICS 意法半导体 | |
STP26NM60ND产品属性
- 类型
描述
- 型号
STP26NM60ND
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A TO220
- 制造商
STMicroelectronics
- 功能描述
Single N-Channel 650 V 0.175 Ohm 190 W Through Hole Power Mosfet - TO-220-3
- 制造商
STMicroelectronics
- 功能描述
N-channel 600 V, 0.144 Ohm typ., 21 A, TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3459 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
25+ |
原厂原封可拆 |
54685 |
百分百原装现货有单来谈 |
|||
ST |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法 |
24+ |
TO-220 |
6000 |
全新原装,一手货源,全场热卖! |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
ST/意法 |
21+ |
TO-220 |
6240 |
优势供应 实单必成 可开增值税13点 |
|||
ST |
25+23+ |
TO-220 |
23700 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法 |
23+ |
TO-220 |
8000 |
原装正品实单必成 |
|||
ST/意法 |
24+ |
TO-220 |
39197 |
郑重承诺只做原装进口现货 |
STP26NM60ND规格书下载地址
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