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STB26NM60ND中文资料
STB26NM60ND数据手册规格书PDF详情
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
Features
• 100 avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
STB26NM60ND产品属性
- 类型
描述
- 型号
STB26NM60ND
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Tape and Reel
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Cut TR(SOS)
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A D2PAK
- 制造商
STMicroelectronics
- 功能描述
600V, 0.144OHM, 21A, POWERFET W/ FAST DIODE, N-CHANNEL, D2PAK
- 制造商
STMicroelectronics
- 功能描述
Single N-Channel 600 V 0.175 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
NEC |
23+ |
SOP-8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
STM |
25+ |
TO-263 |
326 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST/意法 |
22+ |
SMD |
30000 |
只做原装正品 |
|||
ST/意法 |
24+ |
TO-263 |
990000 |
明嘉莱只做原装正品现货 |
|||
ST/意法半导体 |
SOT-263 |
22+ |
8000 |
终端免费提供样品 可开13%增值税发票 |
STB26NM60ND 价格
参考价格：￥26.1954
STB26NM60ND 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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