位置：首页 > IC中文资料第3850页 > STB26NM60ND
STB26NM60ND价格
参考价格：￥26.1954
型号：STB26NM60ND 品牌：STMicroelectronics 备注：这里有STB26NM60ND多少钱，2025年最近7天走势，今日出价，今日竞价，STB26NM60ND批发/采购报价，STB26NM60ND行情走势销售排行榜，STB26NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB26NM60ND | iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
STB26NM60ND | Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STB26NM60ND产品属性
- 类型
描述
- 型号
STB26NM60ND
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Tape and Reel
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Cut TR(SOS)
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A D2PAK
- 制造商
STMicroelectronics
- 功能描述
600V, 0.144OHM, 21A, POWERFET W/ FAST DIODE, N-CHANNEL, D2PAK
- 制造商
STMicroelectronics
- 功能描述
Single N-Channel 600 V 0.175 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SMD |
30000 |
只做原装正品 |
|||
ST |
21+ |
TO-263 |
23480 |
||||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ST |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
|||
ST/意法 |
24+ |
TO-263 |
990000 |
明嘉莱只做原装正品现货 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
24+ |
TO-263-3 |
8866 |
|||||
ST |
23+ |
TO-263 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
STB26NM60ND芯片相关品牌
STB26NM60ND规格书下载地址
STB26NM60ND参数引脚图相关
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- STB6013
- STB6012
- STB6011
- STB6010
- STB6000
- STB5701
- STB5610
- STB5600
- STB560
- STB520N
- STB5200
- STB5150
- STB5100
- STB458D
- STB4410
- STB4395
- STB434S
- STB432S
- STB416D
- STB34NM60N
- STB34N65M5
- STB33N65M2
- STB33N60M2
- STB32NM50N
- STB32N65M5
- STB31N65M5
- STB30NM60N
- STB30NM50N
- STB30NF20L
- STB30NF20
- STB30NF10T4
- STB30N65M5
- STB3015
- STB300NH02L
- STB2N62K3
- STB28NM60ND
- STB28NM50N
- STB28N65M2
- STB28N60M2
- STB270N4F3
- STB26NM60N
- STB25NM60ND
- STB25NM50N-1
- STB25N80K5
- STB24NM65N
- STB24NM60N
- STB24N65M2
- STB24N60M2
- STB24N60DM2/BKN
- STB24N60DM2
- STB23NM60ND
- STB23NM50N
- STB22NM60N
- STB21NM60ND
- STB21NM50N-1
- STB21NK50Z
- STB21N90K5
- STB21N65M5
- STB20NM60T4
- STB20NM60D
- STB2060
- STB205L
- STB2045
- STB1560
- STB1306
- STB1277
- STB1188
- STB1132
- STB1106
- STB1082
- STB1060
- STB1045
- STB0899
- STB0210
- STAS2
- STAR250
- STAC6-Q
- STAC6-C
- STABP01
- STA92N
STB26NM60ND数据表相关新闻
STB35N65DM2
STB35N65DM2芯片是一种功能强大、性能稳定的高性能功率MOSFET，具有广泛的应用前景。它的高效率、可靠性和多种保护功能使得它成为各种功率应用中的理想选择，将为工业、汽车和消费电子等领域的发展提供强大的支持。
2023-11-24STB12NM50ND
STB12NM50ND
2023-8-2STBR3012G2Y-T
https://hfx03.114ic.com
2022-12-14STB13NM60N
热卖-原装正品现货
2022-8-11STBC08PMR
STBC08PMR电池充电管理芯片ST封装DFN6
2022-8-2STB20N90K5 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STB20N90K5 类别分立半导体产品晶体管-FET，MOSFET-单个 制造商STMicroelectronics 包装：1000 封装：TO-263-3
2021-9-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
