NPN Plastic Power Transistor

NPN Plastic Power Transistor Low frequency power amplifier

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N-channel High Injection POWER MOS transis- tors (IGBT) which features a high impedance in- sulated gate input and a low on-resistance characteristi

Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5 Power MOSFET in an H²PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率三极管

Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR