• HIGH INPUT IMPEDANCE

• LOW ON-VOLTAGE

• HIGH CURRENT CAPABILITY

APPLICATIONS:

• AUTOMOTIVE IGNITION

• DRIVERS FOR SOLENOIDS AND RELAYS

N-channel High Injection POWER MOS transis-

tors (IGBT) which features a high impedance in-

sulated gate input and a low on-resistance

characteristic of bipolar transistors. This low

resistance is achieved by conductivity modulation

of the drain. These devices are particularly suited

to automative ignition switching. They can also be

used as drivers for solenoids and relays.