This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs， which represent an optimal balance between inverter system performance and_efficiency where the low-loss and_the short-circuit functionality is essential. Furthermore， the positive VCE(sat) temperature coefficient and_the tight parameter distribution result in safer paralleling operation.
主要特性
AEC-Q101 qualified
6 μs of short-circuit withstand_time
VCE(sat) = 1.65 V (typ.) @ IC = 120 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and_very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
